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S29GL128N11TAIV10 参数 Datasheet PDF下载

S29GL128N11TAIV10图片预览
型号: S29GL128N11TAIV10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
the first sector (SA0). This mode of operation continues until the system issues the Exit Se-  
cured Silicon Sector command sequence, or until power is removed from the device. On  
power-up, or following a hardware reset, the device reverts to sending commands to sector  
SA0.  
Customer Lockable: Secured Silicon Sector NOT Programmed or  
Protected At the Factory  
Unless otherwise specified, the device is shipped such that the customer may program and  
protect the 256-byte Secured Silicon sector.  
The system may program the Secured Silicon Sector using the write-buffer, accelerated  
and/or unlock bypass methods, in addition to the standard programming command sequence.  
See Command Definitions‚ on page 50.  
Programming and protecting the Secured Silicon Sector must be used with caution since, once  
protected, there is no procedure available for unprotecting the Secured Silicon Sector area  
and none of the bits in the Secured Silicon Sector memory space can be modified in any way.  
The Secured Silicon Sector area can be protected using one of the following procedures:  
„ Write the three-cycle Enter Secured Silicon Sector Region command.  
„ To verify the protect/unprotect status of the Secured Silicon Sector, follow the algorithm.  
Once the Secured Silicon Sector is programmed, locked and verified, the system must write  
the Exit Secured Silicon Sector Region command sequence to return to reading and writing  
within the remainder of the array.  
Factory Locked: Secured Silicon Sector Programmed and  
Protected At the Factory  
In devices with an ESN, the Secured Silicon Sector is protected when the device is shipped  
from the factory. The Secured Silicon Sector cannot be modified in any way. An ESN Factory  
Locked device has an 16-byte random ESN at addresses 000000h–000007h. Please contact  
your sales representative for details on ordering ESN Factory Locked devices.  
Customers may opt to have their code programmed by the factory through the ExpressFlash  
service (Express Flash Factory Locked). The devices are then shipped from the factory with  
the Secured Silicon Sector permanently locked. Contact your sales representative for details  
on using the ExpressFlash service.  
Write Protect (WP#)  
The Write Protect function provides a hardware method of protecting the first or last sector  
group without using VID. Write Protect is one of two functions provided by the WP#/ACC  
input.  
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase func-  
tions in the first or last sector group independently of whether those sector groups were  
protected or unprotected using the method described in Advanced Sector Protection‚ on  
page 38. Note that if WP#/ACC is at VIL when the device is in the standby mode, the maxi-  
mum input load current is increased. See the table in DC Characteristics‚ on page 74.  
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the  
first or last sector was previously set to be protected or unprotected. Note that WP#  
has an internal pullup; when unconnected, WP# is at VIH  
.
44  
S29GL-N MirrorBit™ Flash Family  
S29GL-N_00_B3 October 13, 2006