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S29GL128N11TAIV10 参数 Datasheet PDF下载

S29GL128N11TAIV10图片预览
型号: S29GL128N11TAIV10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有110纳米MirrorBit⑩工艺技术 [3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology]
分类和应用: 闪存
文件页数/大小: 100 页 / 2678 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
Hardware Data Protection  
The command sequence requirement of unlock cycles for programming or erasing provides  
data protection against inadvertent writes (refer to Table 12 on page 63 and Table 14 on  
page 65 for command definitions). In addition, the following hardware data protection mea-  
sures prevent accidental erasure or programming, which might otherwise be caused by  
spurious system level signals during VCC power-up and power-down transitions, or from sys-  
tem noise.  
Low V  
Write Inhibit  
CC  
When VCC is less than VLKO, the device does not accept any write cycles. This protects data  
during VCC power-up and power-down. The command register and all internal program/erase  
circuits are disabled, and the device resets to the read mode. Subsequent writes are ignored  
until VCC is greater than VLKO. The system must provide the proper signals to the control pins  
to prevent unintentional writes when VCC is greater than VLKO  
.
Write Pulse Glitch Protection  
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.  
Logical Inhibit  
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To ini-  
tiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one.  
Power-Up Write Inhibit  
If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands  
on the rising edge of WE#. The internal state machine is automatically reset to the read mode  
on power-up.  
S29GL-N_00_B3 October 13, 2006  
S29GL-N MirrorBit™ Flash Family  
45