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S29GL064N90TFI070 参数 Datasheet PDF下载

S29GL064N90TFI070图片预览
型号: S29GL064N90TFI070
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆, 32兆3.0伏只页面模式闪存设有110纳米的MirrorBit工艺技术 [64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 79 页 / 3123 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
Figure 15.11 Alternate CE# Controlled Write (Erase/Program) Operation Timings  
PBA for program  
2AA for erase  
SA for program buffer to flash  
SA for sector erase  
555 for chip erase  
Data# Polling  
Addresses  
PA  
tWC  
tWH  
tAS  
tAH  
WE#  
OE#  
tGHEL  
tWHWH1 or 2  
tCP  
CE#  
Data  
tWS  
tCPH  
tDS  
tBUSY  
tDH  
DQ7#  
DOUT  
tRH  
PBD for program 29 for program buffer to flash  
55 for erase  
30 for sector erase  
10 for chip erase  
RESET#  
RY/BY#  
Notes  
1. Figure indicates last two bus cycles of a program or erase operation.  
2. PA = program address, SA = sector address, PD = program data.  
3. DQ7# is the complement of the data written to the device. D  
4. Illustration shows device in word mode.  
is the data written to the device.  
OUT  
72  
S29GL-N MirrorBit® Flash Family  
S29GL-N_01_09 November 16, 2007