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S29GL064N90TFI070 参数 Datasheet PDF下载

S29GL064N90TFI070图片预览
型号: S29GL064N90TFI070
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆, 32兆3.0伏只页面模式闪存设有110纳米的MirrorBit工艺技术 [64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 79 页 / 3123 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
Figure 15.7 Chip/Sector Erase Operation Timings  
Erase Command Sequence (last two cycles)  
Read Status Data  
VA  
tAS  
SA  
tWC  
VA  
Addresses  
CE#  
2AAh  
555h for chip erase  
tAH  
tCH  
OE#  
tWP  
WE#  
tWPH  
tWHWH2  
tCS  
tDS  
tDH  
In  
Data  
Complete  
55h  
30h  
Progress  
10 for Chip Erase  
tBUSY  
tRB  
RY/BY#  
VCC  
tVCS  
Notes  
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status on page 55.)  
2. Illustration shows device in word mode.  
Figure 15.8 Data# Polling Timings (During Embedded Algorithms)  
tRC  
Addresses  
CE#  
VA  
tACC  
tCE  
VA  
VA  
tPOLL  
tCH  
tOE  
OE#  
WE#  
tDF  
tOH  
tOEH  
High Z  
DQ7  
Valid Data  
Valid Data  
Complement  
Complement  
True  
High Z  
DQ0–DQ6  
Status Data  
True  
Status Data  
tBUSY  
RY/BY#  
Note  
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.  
November 16, 2007 S29GL-N_01_09  
S29GL-N MirrorBit® Flash Family  
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