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S29GL064N90TFI070 参数 Datasheet PDF下载

S29GL064N90TFI070图片预览
型号: S29GL064N90TFI070
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆, 32兆3.0伏只页面模式闪存设有110纳米的MirrorBit工艺技术 [64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology]
分类和应用: 闪存
文件页数/大小: 79 页 / 3123 K
品牌: SPANSION [ SPANSION ]
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D a t a S h e e t  
10.9 Command Definitions  
Table 10.1 Command Definitions (x16 Mode, BYTE# = VIH)  
Command  
Bus Cycles (Notes 25)  
Sequence  
(Note 1)  
First  
RA  
Second  
Third  
Fourth  
Fifth  
Sixth  
Read (Note 5)  
Reset (Note 6)  
1
1
4
6
4
4
RD  
F0  
XXX  
555  
555  
555  
555  
Manufacturer ID  
AA  
AA  
AA  
AA  
2AA  
55  
55  
55  
55  
555  
90  
90  
90  
90  
X00  
X01  
X01  
X03  
0001  
Device ID (Note 8)  
2AA  
2AA  
2AA  
555  
555  
555  
227E  
X0E (Note 18) X0F (Note 18)  
Device ID  
(Note 17)  
(Note 9)  
Secured Silicon Sector Factory Protect  
Sector Protect Verify  
(Note 10)  
4
555  
AA  
2AA  
55  
555  
90 (SA)X02  
88  
00/01  
Enter Secured Silicon Sector Region  
Exit Secured Silicon Sector Region  
Program  
3
4
4
3
1
3
3
2
2
6
6
1
1
1
555  
555  
555  
555  
SA  
AA  
AA  
AA  
AA  
29  
2AA  
2AA  
2AA  
2AA  
55  
55  
55  
55  
555  
555  
555  
SA  
90  
A0  
25  
XXX  
PA  
00  
PD  
WC  
Write to Buffer (Note 11)  
Program Buffer to Flash  
Write to Buffer Abort Reset (Note 12)  
Unlock Bypass  
SA  
PA  
PD  
WBL  
PD  
555  
555  
XXX  
XXX  
555  
555  
XXX  
XXX  
55  
AA  
AA  
A0  
90  
2AA  
2AA  
PA  
55  
55  
PD  
00  
55  
55  
555  
555  
F0  
20  
Unlock Bypass Program (Note 13)  
Unlock Bypass Reset (Note 14)  
Chip Erase  
XXX  
2AA  
2AA  
AA  
AA  
B0  
30  
555  
555  
80  
80  
555  
555  
AA  
AA  
2AA  
2AA  
55  
55  
555  
SA  
10  
30  
Sector Erase  
Program/Erase Suspend (Note 15)  
Program/Erase Resume (Note 16)  
CFI Query (Note 17)  
98  
Legend  
X = Don’t care  
PD = Program Data for location PA. Data latches on rising edge of WE# or  
CE# pulse, whichever happens first.  
RA = Read Address of memory location to be read.  
RD = Read Data read from location RA during read operation.  
SA = Sector Address of sector to be verified (in autoselect mode) or erased.  
Address bits A21–A15 uniquely select any sector.  
PA = Program Address. Addresses latch on falling edge of WE# or CE# pulse,  
whichever happens later.  
WBL = Write Buffer Location. Address must be within same write buffer page  
as PA.  
WC = Word Count. Number of write buffer locations to load minus 1.  
Notes  
1. See Table 8.1 on page 17 for description of bus operations.  
11. Total number of cycles in command sequence is determined by number of  
words written to write buffer. Maximum number of cycles in command  
sequence is 21, including Program Buffer to Flash command.  
2. All values are in hexadecimal.  
3. Shaded cells indicate read cycles. All others are write cycles.  
12. Command sequence resets device for next command after aborted write-  
to-buffer operation.  
4. During unlock and command cycles, when lower address bits are 555 or  
2AA as shown in table, address bits above A11 and data bits above DQ7  
are don’t care.  
13. Unlock Bypass command is required prior to Unlock Bypass Program  
command.  
5. No unlock or command cycles required when device is in read mode.  
14. Unlock Bypass Reset command is required to return to read mode when  
device is in unlock bypass mode.  
6. Reset command is required to return to read mode (or to erase-suspend-  
read mode if previously in Erase Suspend) when device is in autoselect  
mode, or if DQ5 goes high while device is providing status information.  
15. System may read and program in non-erasing sectors, or enter autoselect  
mode, when in Erase Suspend mode. Erase Suspend command is valid  
only during a sector erase operation.  
7. Fourth cycle of the autoselect command sequence is a read cycle. Data  
bits DQ15–DQ8 are don’t care. Except for RD, PD and WC. See Autoselect  
Command Sequence on page 42 for more information.  
16. Erase Resume command is valid only during Erase Suspend mode.  
17. Command is valid when device is ready to read array data or when device  
is in autoselect mode.  
8. For S29GL064N and S29GL032N, Device ID must be read in three cycles.  
9. Refer to Table 8.9 on page 29 for data indicating Secured Silicon Sector  
factory protect status.  
18. Refer to Table 8.9 on page 29, for individual Device IDs per device density  
and model number.  
10. Data is 00h for an unprotected sector and 01h for a protected sector.  
November 16, 2007 S29GL-N_01_09  
S29GL-N MirrorBit® Flash Family  
51