P r e l i m i n a r y
Erase And Programming Performance
Max
Parameter
Typ (Note 1)
(Note 2)
Unit
Comments
Sector Erase Time
0.5
32
3.5
64
sec
Excludes
00h
programm
ingpriorto
erasure
S29GL032M
S29GL064M
S29GL128M
S29GL256M
64
128
256
512
Chip Erase Time
sec
128
256
240
Note (6)
Total Write Buffer Program Time Notes (3), (5)
µs
µs
Total Accelerated Effective Write Buffer Program Time Notes (4),
(5)
200
Excludes
system
level
overhead
Note (7)
S29GL032M
31.5
63
S29GL064M
Chip Program Time
S29GL128M
sec
126
252
S29GL256M
Notes:
1. Typical program and erase times assume the following conditions: 25°C, V = 3.0V, 10,000 cycles; checkerboard data pattern.
CC
2. Under worst case conditions of 90°C; Worst case V , 100,000 cycles.
CC
3. Effective programming time (typ) is 15 µs (per word), 7.5 µs (per byte).
4. Effective accelerated programming time (typ) is 12.5 µs (per word), 6.3 µs (per byte).
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See Tables 31 and 32 for
further information on command definitions.
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBitTM Flash Family
143
SPANSION [ SPANSION ]
