P r e l i m i n a r y
AC Characteristics
Alternate CE# Controlled Erase and Program Operations-S29GL032M
Parameter
Speed Options
JEDEC
Std.
tWC
tAS
Description
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
90
10
100
0
11
Unit
ns
tAVAV
tAVWL
tELAX
tDVEH
tEHDX
Min
Min
Min
Min
Min
90
110
ns
tAH
tDS
45
35
0
ns
ns
tDH
Data Hold Time
ns
Read Recovery Time Before Write
(OE# High to WE# Low)
tGHEL
tGHEL
Min
0
ns
tWLEL
tEHWH
tELEH
tEHEL
tWS
tWH
tCP
WE# Setup Time
WE# Hold Time
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Min
Max
0
0
ns
ns
ns
ns
CE# Pulse Width
35
25
240
60
54
0.5
50
4
tCPH
CE# Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Single Word Program Operation (Note 2)
Accelerated Single Word Program Operation (Note 2)
Sector Erase Operation (Note 2)
RESET# High Time Before Write
Program Valid before Status Polling (Note 4)
tWHWH1
tWHWH1
µs
tWHWH2
tWHWH2
tRH
sec
ns
tPOLL
µs
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. If a program suspend command is issued within t
, the device requires t
before reading status data, once programming has resumed
POLL
POLL
(that is, the program resume command has been written). If the suspend command was issued after t
immediately after programming has resumed. See Figure 23.
, status data is available
POLL
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBitTM Flash Family
141
SPANSION [ SPANSION ]
