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S29GL064M90TFIR20 参数 Datasheet PDF下载

S29GL064M90TFIR20图片预览
型号: S29GL064M90TFIR20
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有0.23微米的MirrorBit制程技术 [3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 160 页 / 4686 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y  
AC Characteristics  
PBA for program  
SA for program buffer to flash  
2AA for erase  
SA for sector erase  
555 for chip erase  
Data# Polling  
Addresses  
PA  
tWC  
tWH  
tAS  
tAH  
WE#  
OE#  
tPOLL  
tGHEL  
tWHWH1 or 2  
tCP  
CE#  
Data  
tWS  
tCPH  
tDS  
tBUSY  
tDH  
DQ7#  
DOUT  
tRH  
PBD for program 29 for program buffer to flash  
55 for erase  
30 for sector erase  
10 for chip erase  
RESET#  
RY/BY#  
Notes:  
1. Figure indicates last two bus cycles of a program or erase operation.  
2. PA = program address, SA = sector address, PD = program data.  
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.  
4. Illustration shows device in word mode.  
Figure 24. Alternate CE# Controlled Write (Erase/Program)  
Operation Timings  
142  
S29GLxxxM MirrorBitTM Flash Family  
S29GLxxxM_00A5 April 30, 2004  
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