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S29GL256M10TAIR10 参数 Datasheet PDF下载

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型号: S29GL256M10TAIR10
PDF下载: 下载PDF文件 查看货源
内容描述: 3.0伏只页面模式闪存具有0.23微米的MirrorBit制程技术 [3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 160 页 / 4686 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y  
Table 29. Device Geometry Definition  
Addresses  
(x16)  
Addresses  
(x8)  
Data  
Description  
0019h  
0018h  
0017h  
0016h  
Device Size = 2N byte  
27h  
4Eh  
19 = 256 Mb, 18 = 128 Mb, 17 = 64 Mb, 16 = 32 Mb  
Flash Device Interface description (refer to CFI publication 100)  
28h  
29h  
50h  
52h  
000xh  
0000h  
0000h = x8-only bus devices  
0001h = x16-only bus devices  
0002h = x8/x16 bus devices  
2Ah  
2Bh  
54h  
56h  
0005h  
0000h  
Max. number of byte in multi-byte write = 2N  
(00h = not supported)  
0001h  
0002h  
Number of Erase Block Regions within device (01h = uniform device,  
02h = boot device)  
2Ch  
58h  
Erase Block Region 1 Information  
(refer to the CFI specification or CFI publication 100)  
003Fh, 0000h, 0001h = 32 Mb (-R0, -R3, -R4)  
007Fh, 0000h, 0020h, 0000h = 32 Mb (-R1, -R2), 64 Mb (-R1, -R2)  
007Fh, 0000h, 0000h, 0001h = 64 Mb (-R0, -R3, -R4, -R5, -R6, -R7)  
00FFh, 0000h, 0000h, 0001h = 128 Mb  
2Dh  
2Eh  
2Fh  
30h  
5Ah  
5Ch  
5Eh  
60h  
00xxh  
000xh  
00x0h  
000xh  
00FFh, 0001h, 0000h, 0001h = 256 Mb  
31h  
32h  
33h  
34h  
60h  
64h  
66h  
68h  
00xxh  
0000h  
0000h  
000xh  
Erase Block Region 2 Information (refer to CFI publication 100)  
003Eh, 0000h, 0000h, 0001h = 32 Mb (-R1, -R2)  
007Eh, 0000h, 0000h, 0001h = 64 Mb (-R1, -R2)  
0000h, 0000h, 0000h, 0000h = all others  
35h  
36h  
37h  
38h  
6Ah  
6Ch  
6Eh  
70h  
0000h  
0000h  
0000h  
0000h  
Erase Block Region 3 Information (refer to CFI publication 100)  
Erase Block Region 4 Information (refer to CFI publication 100)  
39h  
3Ah  
3Bh  
3Ch  
72h  
74h  
76h  
78h  
0000h  
0000h  
0000h  
0000h  
100  
S29GLxxxM MirrorBitTM Flash Family  
S29GLxxxM_00A5 April 30, 2004  
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