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S29GL016A90TFER22 参数 Datasheet PDF下载

S29GL016A90TFER22图片预览
型号: S29GL016A90TFER22
PDF下载: 下载PDF文件 查看货源
内容描述: S29GL -A的MirrorBit闪存系列 [S29GL-A MirrorBit Flash Family]
分类和应用: 闪存
文件页数/大小: 89 页 / 1910 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
START  
Read DQ15–DQ0  
Addr = VA  
Yes  
DQ7 = Data?  
No  
No  
DQ5 = 1?  
Yes  
Read DQ15–DQ0  
Addr = VA  
Yes  
DQ7 = Data?  
No  
PASS  
FAIL  
Notes:  
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased.  
During chip erase, a valid address is any non-protected sector address.  
2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5.  
Figure 7. Data# Polling Algorithm  
RY/BY#: Ready/Busy#  
The RY/BY# is a dedicated, open-drain output pin which indicates whether an  
Embedded Algorithm is in progress or complete. The RY/BY# status is valid after  
the rising edge of the final WE# pulse in the command sequence. Since RY/BY#  
is an open-drain output, several RY/BY# pins can be tied together in parallel with  
a pull-up resistor to V  
.
CC  
If the output is low (Busy), the device is actively erasing or programming. (This  
includes programming in the Erase Suspend mode.) If the output is high  
(Ready), the device is in the read mode, the standby mode, or in the erase-sus-  
pend-read mode. Table 32 on page 61 shows the outputs for RY/BY#.  
April 22, 2005 S29GL-A_00_A3  
S29GL-A MirrorBit™ Flash Family  
57  
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