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S29CD032G0JFAN012 参数 Datasheet PDF下载

S29CD032G0JFAN012图片预览
型号: S29CD032G0JFAN012
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS 2.5伏只突发模式下的双启动,同步读/写FLASH MEMORY [CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY]
分类和应用:
文件页数/大小: 93 页 / 1616 K
品牌: SPANSION [ SPANSION ]
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A d v a n c e I n f o r m a t i o n  
Locking, or Persistent Protection Bits. Unlike devices that have the Single High  
Voltage Sector Unprotect/Protect feature, the device has the standard two-cycle  
unlock followed by 60h, which places the device into non-volatile bit program or  
erase mode. Once the mode is entered, the specific non-volatile bit status is read  
on DQ0. 4 shows a typical flow for programming the non-volatile bit and 5 shows  
a typical flow for erasing the non-volatile bits. The SecSi Sector Protection, Pass-  
word Locking, Persistent Sector Protection Mode Locking bits are not erasable  
after they are programmed. However, the PPBs are both erasable and program-  
mable (depending upon device security).  
Unlike Single High Voltage Sector Protect/Unprotect, the A6 pin no longer func-  
tions as the program/erase selector nor the program/erase margin enable.  
Instead, this function is accomplished by issuing the specific command for either  
program (68h) or erase (60h).  
In asynchronous mode, the DQ6 toggle bit indicates whether the program or  
erase sequence is active. (In synchronous mode, ADV# indicates the status.) If  
the DQ6 toggle bit toggles with either OE# or CE#, the non-volatile bit program  
or erase operation is in progress. When DQ6 stops toggling, the value of the non-  
volatile bit is available on DQ0.  
60  
S29CD032G  
30606B0 March 22, 2004  
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