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S29AL016M10BFI020 参数 Datasheet PDF下载

S29AL016M10BFI020图片预览
型号: S29AL016M10BFI020
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8位/ IMX 16位), 3.0伏只引导扇区闪存 [16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY]
分类和应用: 闪存内存集成电路
文件页数/大小: 59 页 / 2056 K
品牌: SPANSION [ SPANSION ]
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The internal state machine is set for reading array data upon device power-up,  
or after a hardware reset. This ensures that no spurious alteration of the mem-  
ory content occurs during the power transition. No command is necessary in  
this mode to obtain array data. Standard microprocessor read cycles that as-  
sert valid addresses on the device address inputs produce valid data on the  
device data outputs. The device remains enabled for read access until the com-  
mand register contents are altered.  
See “Reading Array Data” for more information. Refer to the AC Read Operations  
table for timing specifications and to Figure 13 for the timing diagram. I  
in the  
CC1  
DC Characteristics table represents the active current specification for reading  
array data.  
Writing Commands/Command Sequences  
To write a command or command sequence (which includes programming data  
to the device and erasing sectors of memory), the system must drive WE# and  
CE# to V , and OE# to V .  
IL  
IH  
For program operations, the BYTE# pin determines whether the device accepts  
program data in bytes or words. Refer to “Word Configuration” for more  
information.  
The device features an Unlock Bypass mode to facilitate faster programming.  
Once the device enters the Unlock Bypass mode, only two write cycles are re-  
quired to program a word or byte, instead of four. The “Word Program Command  
Sequence” section has details on programming data to the device using both  
standard and Unlock Bypass command sequences.  
An erase operation can erase one sector, multiple sectors, or the entire device.  
Tables 2 and 3 indicate the address space that each sector occupies. A “sector  
address” consists of the address bits required to uniquely select a sector. The  
“Command Definitions” section has details on erasing a sector or the entire chip,  
or suspending/resuming the erase operation.  
After the system writes the autoselect command sequence, the device enters the  
autoselect mode. The system can then read autoselect codes from the internal  
register (which is separate from the memory array) on DQ7–DQ0. Standard read  
cycle timings apply in this mode. Refer to the “Autoselect Mode” and “Autoselect  
Command Sequence” sections for more information.  
I
in the DC Characteristics table represents the active current specification for  
CC2  
the write mode. The “AC Characteristics” section contains timing specification ta-  
bles and timing diagrams for write operations.  
Program and Erase Operation Status  
During an erase or program operation, the system may check the status of the  
operation by reading the status bits on DQ7–DQ0. Standard read cycle timings  
and I read specifications apply. Refer to “Write Operation Status” for more in-  
CC  
formation, and to “AC Characteristics” for timing diagrams.  
Standby Mode  
When the system is not reading or writing to the device, it can place the device  
in the standby mode. In this mode, current consumption is greatly reduced, and  
the outputs are placed in the high impedance state, independent of the OE#  
input.  
April 21, 2004 S29AL016M_00A4  
S29AL016M  
12