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MBM29DL324TE90TN 参数 Datasheet PDF下载

MBM29DL324TE90TN图片预览
型号: MBM29DL324TE90TN
PDF下载: 下载PDF文件 查看货源
内容描述: FLASH存储器CMOS 32米(4 MX 8/2 MX 16 )位双操作 [FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation]
分类和应用: 存储
文件页数/大小: 84 页 / 1272 K
品牌: SPANSION [ SPANSION ]
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MBM29DL32XTE/BE80/90  
Reading Toggle Bits DQ6/DQ2  
Whenever the system initially begins reading toggle bit status, it must read DQ7 to DQ0 at least twice in a row  
to determine whether a toggle bit is toggling. Typically a system would note and store the value of the toggle bit  
after the first read. After the second read, the system would compare the new value of the toggle bit with the  
first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can  
read array data on DQ7 to DQ0 on the following read cycle.  
However, if, after the initial two read cycles, the system determines that the toggle bit is still toggling, the system  
also should note whether the value of DQ5 is high (see the section on DQ5) . If it is, the system should then  
determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5  
went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase  
operation. If it is still toggling, the device did not complete the operation successfully, and the system must write  
the reset command to return to reading array data.  
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not  
gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, deter-  
mining the status as described in the previous paragraph. Alternatively, it may choose to perform other system  
tasks. In this case, the system must start at the begining of the algorithm when it returns to determine the status  
of the operation. (Refer to “Toggle Bit Algorithm” in “FLOW CHART”.)  
Toggle Bit Status  
Mode  
DQ7  
DQ7  
0
DQ6  
DQ2  
1
Program  
Erase  
Toggle  
Toggle  
Toggle*1  
Erase-Suspend Read  
(Erase-Suspended Sector)  
1
1
Toggle  
1*2  
Erase-Suspend Program  
DQ7  
Toggle  
*1 : Successive reads from the erasing or erase-suspend sector will cause DQ2 to toggle.  
*2 : Reading from the non-erase suspend sector address will indicate logic “1” at the DQ2 bit.  
• RY/BY  
Ready/Busy  
The MBM29DL32XTE/BE provide a RY/BY open-drain output pin as a way to indicate to the host system that  
the Embedded Algorithms are either in progress or has been completed. If the output is low, the devices are  
busy with either a program or erase operation. If the output is high, the devices are ready to accept any read/  
write or erase operation. If the MBM29DL32XTE/BE are placed in an Erase Suspend mode, the RY/BY output  
will be high.  
During programming, the RY/BY pin is driven low after the rising edge of the fourth write pulse. During an erase  
operation, the RY/BY pin is driven low after the rising edge of the sixth write pulse. The RY/BY pin will indicate  
a busy condition during the RESET pulse. Refer to “RY/BY Timing Diagram during Program/Erase Operations”  
andRESET, RY/BYTimingDiagramforadetailedtimingdiagram. TheRY/BYpinispulledhighinstandbymode.  
Since this is an open-drain output, the pull-up resistor needs to be connected to VCC; multiples of devices may  
be connected to the host system via more than one RY/BY pin in parallel.  
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