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MBM29DL324TE90TN 参数 Datasheet PDF下载

MBM29DL324TE90TN图片预览
型号: MBM29DL324TE90TN
PDF下载: 下载PDF文件 查看货源
内容描述: FLASH存储器CMOS 32米(4 MX 8/2 MX 16 )位双操作 [FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation]
分类和应用: 存储
文件页数/大小: 84 页 / 1272 K
品牌: SPANSION [ SPANSION ]
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MBM29DL32XTE/BE80/90  
(Continued)  
Description  
A0 to A6  
DQ0 to DQ15  
40h  
41h  
42h  
0050h  
0052h  
0049h  
Query-unique ASCII string “PRI”  
Major version number, ASCII  
Minor version number, ASCII  
43h  
44h  
0031h  
0032h  
Address Sensitive Unlock  
00h = Required  
45h  
46h  
0000h  
0002h  
Erase Suspend  
02h = To Read & Write  
Sector Protection  
00h = Not Supported  
47h  
0001h  
X = Number of sectors in per group  
Sector Temporary Unprotection  
01h = Supported  
48h  
49h  
0001h  
0004h  
Sector Protection Algorithm  
Number of Sector for Bank 2  
00h = Not Supported  
38h = MBM29DL322TE  
30h = MBM29DL323TE  
20h = MBM29DL324TE  
38h = MBM29DL322BE  
30h = MBM29DL323BE  
20h = MBM29DL324BE  
4Ah  
00XXh  
Burst Mode Type  
00h = Not Supported  
4Bh  
4Ch  
4Dh  
4Eh  
0000h  
0000h  
0085h  
0095h  
Page Mode Type  
00h = Not Supported  
VACC (Acceleration) Supply Minimum  
DQ7 to DQ4 : 1 V, DQ3 to DQ0 : 100 mV  
VACC (Acceleration) Supply Maximum  
DQ7 to DQ4 : 1 V, DQ3 to DQ0 : 100 mV  
Boot Type  
02h = MBM29DL32XBE  
03h = MBM29DL32XTE  
4Fh  
50h  
00XXh  
0001h  
Program Suspend  
01h = Supported  
34  
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