MBM29DL32XTE/BE80/90
Common Flash Memory Interface Code
A0 to A6
Description
DQ0 to DQ15
10h
11h
12h
0051h
0052h
0059h
Query-unique ASCII string “QRY”
Primary OEM Command Set
02h : AMD/FJ standard type
13h
14h
0002h
0000h
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command Set (00h = not applicable)
Address for Alternate OEM Extended Table
19h
1Ah
0000h
0000h
VCC Min (write/erase)
DQ7 to DQ4 : 1 V, DQ3 to DQ0 : 100 mV
1Bh
1Ch
0027h
0036h
VCC Max (write/erase)
DQ7 to DQ4 : 1 V, DQ3 to DQ0 : 100 mV
VPP Min voltage
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
27h
0000h
0000h
0004h
0000h
000Ah
0000h
0005h
0000h
0004h
0000h
0016h
VPP Max voltage
Typical timeout per single byte/word write 2N µs
Typical timeout for Min size buffer write 2N µs
Typical timeout per individual sector erase 2N ms
Typical timeout for full chip erase 2N ms
Max timeout for byte/word write 2N times typical
Max timeout for buffer write 2N times typical
Max timeout per individual sector erase 2N times typical
Max timeout for full chip erase 2N times typical
Device Size = 2N byte
Flash Device Interface description
02h : ×8/×16
28h
29h
0002h
0000h
Max number of byte in
multi-byte write = 2N
2Ah
2Bh
0000h
0000h
Number of Erase Block Regions within device
2Ch
0002h
Erase Block Region 1 Information
bit 15 to bit 0 : y = number of sectors
bit 31 to bit 16 : z = size
2Dh
2Eh
2Fh
30h
0007h
0000h
0020h
0000h
(z × 256 bytes)
Erase Block Region 2 Information
bit 15 to bit 0 : y = number of sectors
bit 31 to bit 16 : z = size
31h
32h
33h
34h
003Eh
0000h
0000h
0001h
(z × 256 bytes)
(Continued)
33
SPANSION [ SPANSION ]
