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MBM29DL163BE-70TN 参数 Datasheet PDF下载

MBM29DL163BE-70TN图片预览
型号: MBM29DL163BE-70TN
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存的CMOS 16M ( 2M ×8 / 1M ×16 )位双操作 [FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 76 页 / 1048 K
品牌: SPANSION [ SPANSION ]
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MBM29DL16XTE/BE70/90  
driving status information on DQ7 at one instant of time and then that byte’s valid data at the next instant of time.  
Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device  
has completed the Embedded Algorithm operation and DQ7 has a valid data, the data outputs on DQ6 to DQ0  
may be still invalid. The valid data on DQ7 to DQ0 will be read on the successive read attempts.  
TheDataPollingfeatureisonlyactiveduringtheEmbeddedProgrammingAlgorithm,EmbeddedEraseAlgorithm  
or sector erase time-out. (See “Hardware Sequence Flags Table”.)  
See “(6) AC Waveforms for Data Polling during Embedded Algorithm Operations” in TIMING DIAGRAM for the  
Data Polling timing specifications and diagrams.  
• DQ6  
Toggle Bit I  
The MBM29DL16XTE/BE also feature the “Toggle Bit I” as a method to indicate to the host system that the  
Embedded Algorithms are in progress or completed.  
During an Embedded Program or Erase Algorithm cycle, successive attempts to read (CE or OE toggling) data  
from the devices will result in DQ6 toggling between “1” and “0”. Once the Embedded Program or Erase Algorithm  
cycle is completed, DQ6 will stop toggling and valid data will be read on the next successive attempts. During  
programming, theToggleBitIisvalidaftertherisingedgeofthefourthwritepulseinthefourwritepulsesequence.  
For chip erase and sector erase, the Toggle Bit I is valid after the rising edge of the sixth write pulse in the six  
write pulse sequence. The Toggle Bit I is active during the sector time out.  
In programming, if the sector being written to is protected, the toggle bit will toggle for about 1 µs and then stop  
toggling without the data having changed. In erase, the devices will erase all the selected sectors except for the  
ones that are protected. If all selected sectors are protected, the chip will toggle the toggle bit for about 400 µs  
and then drop back into read mode, having changed none of the data.  
Either CE or OE toggling will cause the DQ6 to toggle. In addition, an Erase Suspend/Resume command will  
cause the DQ6 to toggle.  
The system can use DQ6 to determine whether a sector is actively erasing or is erase-suspended. When a bank  
is actively erasing (that is, the Embedded Erase Algorithm is in progress), DQ6 toggles. When a bank enters the  
Erase Suspend mode, DQ6 stops toggling. Successive read cycles during the erase-suspend-program cause  
DQ6 to toggle.  
To operate toggle bit function properly, CE or OE must be high when bank address is changed.  
See “(7) AC Waveforms for Toggle Bit I during Embedded Algorithm Operations” in TIMING DIAGRAM for the  
Toggle Bit I timing specifications and diagrams.  
• DQ5  
Exceeded Timing Limits  
DQ5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under  
these conditions DQ5 will produce a “1”. This is a failure condition which indicates that the program or erase  
cycle was not successfully completed. Data Polling is the only operating function of the devices under this  
condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA).  
The OE and WE pins will control the output disable functions as described in “MBM29DL16XTE/BE User Bus  
Operations Tables (BYTE = VIH and BYTE = VIL)” in DEVICE BUS OPERATION.  
The DQ5 failure condition may also appear if a user tries to program a non blank location without erasing. In this  
case the devices lock out and never complete the Embedded Algorithm operation. Hence, the system never  
reads a valid data on DQ7 bit and DQ6 never stops toggling. Once the devices have exceeded timing limits, the  
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