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MBM29DL163BE-70TN 参数 Datasheet PDF下载

MBM29DL163BE-70TN图片预览
型号: MBM29DL163BE-70TN
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存的CMOS 16M ( 2M ×8 / 1M ×16 )位双操作 [FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 76 页 / 1048 K
品牌: SPANSION [ SPANSION ]
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MBM29DL16XTE/BE70/90  
To resume the operation of Sector Erase, the Resume command (30h) should be written to the bank being erase  
suspended. Any further writes of the Resume command at this point will be ignored. Another Erase Suspend  
command can be written after the chip has resumed erasing.  
• Extended Command  
(1) Fast Mode  
MBM29DL16XTE/BE have Fast Mode function. This mode dispenses with the initial two unclock cycles  
required in the standard program command sequence by writing Fast Mode command into the command  
register. In this mode, the required bus cycle for programming is two cycles instead of four bus cycles in  
standardprogramcommand. (Donotwriteerasecommandinthismode.)Thereadoperationisalsoexecuted  
afterexitingthismode. Toexitthismode, itisnecessarytowriteFastModeResetcommandintothecommand  
register. The first cycle must contain the bank address. (Refer to “(7) Embedded ProgramTM Algorithm for  
Fast Mode” in FLOW CHART.) The VCC active current is required even CE = VIH during Fast Mode.  
(2) Fast Programming  
During Fast Mode, the programming can be executed with two bus cycles operation. The Embedded Program  
Algorithm is executed by writing program set-up command (A0h) and data write cycles (PA/PD). (Refer to  
“(7) Embedded ProgramTM Algorithm for Fast Mode” in FLOW CHART.)  
(3) Extended Sector Group Protection  
In addition to normal sector group protection, the MBM29DL16XTE/BE have Extended Sector Group  
Protection as extended function. This function enables to protect sector group by forcing VID on RESET pin  
and write a command sequence. Unlike conventional procedure, it is not necessary to force VID and control  
timing for control pins. The extended sector group protection requires VID on RESET pin only. With this  
condition, the operation is initiated by writing the set-up command (60h) into the command register. Then,  
the sector group addresses pins (A20, A19, A18, A17, A16, A15, A14, A13 and A12) and (A6, A1, A0) = (0, 1, 0) should  
be set to the sector group to be protected (recommend to set VIL for the other addresses pins), and write  
extended sector group protection command (60h). A sector group is typically protected in 250 µs. To verify  
programming of the protection circuitry, the sector group addresses pins (A20, A19, A18, A17, A16, A15, A14, A13  
and A12) and (A6, A1, A0) = (0, 1, 0) should be set and write a command (40h). Following the command write,  
a logical “1” at device output DQ0 will produce for protected sector in the read operation. If the output data  
is logical “0”, please repeat to write extended sector group protection command (60h) again. To terminate  
the operation, it is necessary to set RESET pin to VIH. (Refer to “(17) Extended Sector Group Protection  
Timing Diagram” in TIMING DIAGRAM and “(8) Extended Sector Group Protection Algorithm” in FLOW  
CHART.)  
(4) CFI (Common Flash Memory Interface)  
The CFI (Common Flash Memory Interface) specification outlines device and host system software  
interrogation handshake which allows specific vendor-specified software algorithms to be used for entire  
families of devices. This allows device-independent, JEDEC ID-independent, and forward-and backward-  
compatible software support for the specified flash device families. Refer to CFI specification in detail.  
The operation is initiated by writing the query command (98h) into the command register. The bank address  
should be set when writing this command. Then the device information can be read from the bank, and an  
actual data of memory cell be read from the another bank. Following the command write, a read cycle from  
specific address retrives device information. Please note that output data of upper byte (DQ15 to DQ8) is “0”  
in word mode (16 bit) read. Refer to “Common Flash Memory Interface Code Table” in FLEXBLE SECTOR-  
ERASEARCHITECTURE. Toterminateoperation, itisnecessarytowritetheread/resetcommandsequence  
into the register. (See “Common Flash Memory Interface Code Table” in FLEXIBLE SECTOR-ERASE  
ARCHITECTURE.)  
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