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AM29DL322GB90EI 参数 Datasheet PDF下载

AM29DL322GB90EI图片预览
型号: AM29DL322GB90EI
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位( 4米×8位/ 2的M× 16位) CMOS 3.0伏只,同时操作闪存 [32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory]
分类和应用: 闪存
文件页数/大小: 58 页 / 1293 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
again read array data with the same exception. See  
the Erase Suspend/Erase Resume Commands sec-  
tion for more information.  
mode. The autoselect command may not be written  
while the device is actively programming or erasing in  
the other bank.  
The system must issue the reset command to return a  
bank to the read (or erase-suspend-read) mode if DQ5  
goes high during an active program or erase opera-  
tion, or if the bank is in the autoselect mode. See the  
next section, Reset Command, for more information.  
The autoselect command sequence is initiated by first  
writing two unlock cycles. This is followed by a third  
write cycle that contains the bank address and the au-  
toselect command. The bank then enters the autose-  
lect mode. The system may read at any address within  
the same bank any number of times without initiating  
another autoselect command sequence:  
See also Requirements for Reading Array Data in the  
Device Bus Operations section for more information.  
The Read-Only Operations table provides the read pa-  
rameters, and Figure 13 shows the timing diagram.  
A read cycle at address (BA)XX00h (where BA is  
the bank address) returns the manufacturer code.  
A read cycle at address (BA)XX01h in word mode  
(or (BA)XX02h in byte mode) returns the device  
code.  
Reset Command  
Writing the reset command resets the banks to the  
read or erase-suspend-read mode. Address bits are  
don’t cares for this command.  
A read cycle to an address containing a sector ad-  
dress (SA) within the same bank, and the address  
02h on A7–A0 in word mode (or the address 04h on  
A6–A-1 in byte mode) returns 01h if the sector is  
protected, or 00h if it is unprotected. (Refer to Ta-  
bles 3–6 for valid sector addresses).  
The reset command may be written between the se-  
quence cycles in an erase command sequence before  
erasing begins. This resets the bank to which the sys-  
tem was writing to the read mode. Once erasure be-  
gins, however, the device ignores reset commands  
until the operation is complete.  
The system must write the reset command to return to  
the read mode (or erase-suspend-read mode if the  
bank was previously in Erase Suspend).  
The reset command may be written between the  
sequence cycles in a program command sequence  
before programming begins. This resets the bank to  
which the system was writing to the read mode. If the  
program command sequence is written to a bank that  
is in the Erase Suspend mode, writing the reset  
command returns that bank to the erase-sus-  
pend-read mode. Once programming begins, however,  
the device ignores reset commands until the operation  
is complete.  
Enter Secured Silicon Sector/Exit Secured  
Silicon Sector Command Sequence  
The Secured Silicon Sector region provides a secured  
data area containing a random, sixteen-byte electronic  
serial number (ESN). The system can access the Se-  
cured Silicon Sector region by issuing the three-cycle  
Enter Secured Silicon Sector command sequence.  
The device continues to access the Secured Silicon  
Sector region until the system issues the four-cycle  
Exit Secured Silicon Sector command sequence. The  
Exit Secured Silicon Sector command sequence re-  
turns the device to normal operation. The Secured Sil-  
icon Sector is not accessible when the device is  
executing an Embedded Program or Embedded Erase  
algorithm. Table 14 shows the address and data re-  
quirements for both command sequences. See also  
“Secured Silicon Sector Flash Memory Region” for fur-  
ther information.  
The reset command may be written between the se-  
quence cycles in an autoselect command sequence.  
Once in the autoselect mode, the reset command  
must be written to return to the read mode. If a bank  
entered the autoselect mode while in the Erase Sus-  
pend mode, writing the reset command returns that  
bank to the erase-suspend-read mode.  
If DQ5 goes high during a program or erase operation,  
writing the reset command returns the banks to the  
read mode (or erase-suspend-read mode if that bank  
was in Erase Suspend).  
Byte/Word Program Command Sequence  
The system may program the device by word or byte,  
depending on the state of the BYTE# pin. Program-  
ming is a four-bus-cycle operation. The program com-  
mand sequence is initiated by writing two unlock write  
cycles, followed by the program set-up command. The  
program address and data are written next, which in  
turn initiate the Embedded Program algorithm. The  
system is not required to provide further controls or  
timings. The device automatically provides internally  
generated program pulses and verifies the pro-  
Autoselect Command Sequence  
The autoselect command sequence allows the host  
system to access the manufacturer and device codes,  
and determine whether or not a sector is protected.  
Table 14 shows the address and data requirements.  
This method is an alternative to that shown in Table 7,  
which is intended for PROM programmers and re-  
quires VID on address pin A9. The autoselect com-  
mand sequence may be written to an address within a  
bank that is either in the read or erase-suspend-read  
December 4, 2006 25686B10  
Am29DL32xG  
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