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AM29DL322GB90EI 参数 Datasheet PDF下载

AM29DL322GB90EI图片预览
型号: AM29DL322GB90EI
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位( 4米×8位/ 2的M× 16位) CMOS 3.0伏只,同时操作闪存 [32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory]
分类和应用: 闪存
文件页数/大小: 58 页 / 1293 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
Table 13. Primary Vendor-Specific Extended Query  
Addresses  
Addresses  
(Word Mode)  
(Byte Mode)  
Data  
Description  
40h  
41h  
42h  
80h  
82h  
84h  
0050h  
0052h  
0049h  
Query-unique ASCII string “PRI”  
43h  
44h  
86h  
88h  
0031h  
0033h  
Major version number, ASCII  
Minor version number, ASCII  
Address Sensitive Unlock (Bits 1-0)  
0 = Required, 1 = Not Required  
45h  
8Ah  
0004h  
Silicon Revision Number (Bits 7-2)  
Erase Suspend  
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write  
46h  
47h  
48h  
49h  
4Ah  
4Bh  
4Ch  
8Ch  
8Eh  
90h  
92h  
94h  
96h  
98h  
0002h  
0001h  
0001h  
0004h  
Sector Protect  
0 = Not Supported, X = Number of sectors per group  
Sector Temporary Unprotect  
00 = Not Supported, 01 = Supported  
Sector Protect/Unprotect scheme  
04 = 29LV800 mode  
00XXh  
(See Note)  
Simultaneous Operation  
00 = Not Supported, X = Number of Sectors in Bank 2 (Uniform Bank)  
Burst Mode Type  
00 = Not Supported, 01 = Supported  
0000h  
0000h  
Page Mode Type  
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page  
ACC (Acceleration) Supply Minimum  
4Dh  
4Eh  
4Fh  
9Ah  
9Ch  
9Eh  
0085h  
0095h  
000Xh  
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV  
ACC (Acceleration) Supply Maximum  
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV  
Top/Bottom Boot Sector Flag  
02h = Bottom Boot Device, 03h = Top Boot Device  
Note:  
The number of sectors in Bank 2 is device dependent.  
Am29DL322 = 38h, Am29DL323 = 30h, Am29DL324 = 20h  
COMMAND DEFINITIONS  
Writing specific address and data commands or se-  
quences into the command register initiates device op-  
erations. Table 14 defines the valid register command  
sequences. Writing incorrect address and data values  
or writing them in the improper sequence may place  
the device in an unknown state. A reset command is  
then required to return the device to reading array  
data.  
Reading Array Data  
The device is automatically set to reading array data  
after device power-up. No commands are required to  
retrieve data. Each bank is ready to read array data  
after completing an Embedded Program or Embedded  
Erase algorithm.  
After the device accepts an Erase Suspend command,  
the corresponding bank enters the erase-sus-  
pend-read mode, after which the system can read  
data from any non-erase-suspended sector within the  
same bank. After completing a programming operation  
in the Erase Suspend mode, the system may once  
All addresses are latched on the falling edge of WE#  
or CE#, whichever happens later. All data is latched on  
the rising edge of WE# or CE#, whichever happens  
first. Refer to the AC Characteristics section for timing  
diagrams.  
24  
Am29DL32xG  
25686B10 December 4, 2006  
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