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AM29DL322GB90EI 参数 Datasheet PDF下载

AM29DL322GB90EI图片预览
型号: AM29DL322GB90EI
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位( 4米×8位/ 2的M× 16位) CMOS 3.0伏只,同时操作闪存 [32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory]
分类和应用: 闪存
文件页数/大小: 58 页 / 1293 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
shows the address and data requirements for the chip  
erase command sequence.  
Sector Erase Timer.). The time-out begins from the ris-  
ing edge of the final WE# pulse in the command  
sequence.  
When the Embedded Erase algorithm is complete,  
that bank returns to the read mode and addresses are  
no longer latched. The system can determine the sta-  
tus of the erase operation by using DQ7, DQ6, DQ2,  
or RY/BY#. Refer to the Write Operation Status sec-  
tion for information on these status bits.  
When the Embedded Erase algorithm is complete, the  
bank returns to reading array data and addresses are  
no longer latched. Note that while the Embedded  
Erase operation is in progress, the system can read  
data from the non-erasing bank. The system can de-  
termine the status of the erase operation by reading  
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer  
to the Write Operation Status section for information  
on these status bits.  
Any commands written during the chip erase operation  
are ignored. However, note that a hardware reset im-  
mediately terminates the erase operation. If that oc-  
curs, the chip erase command sequence should be  
reinitiated once that bank has returned to reading  
array data, to ensure data integrity.  
Once the sector erase operation has begun, only the  
Erase Suspend command is valid. All other com-  
mands are ignored. However, note that a hardware  
reset immediately terminates the erase operation. If  
that occurs, the sector erase command sequence  
should be reinitiated once that bank has returned to  
reading array data, to ensure data integrity.  
Figure 4 illustrates the algorithm for the erase opera-  
tion. Refer to the Erase and Program Operations ta-  
bles in the AC Characteristics section for parameters,  
and Figure 19 section for timing diagrams.  
Sector Erase Command Sequence  
Figure 4 illustrates the algorithm for the erase opera-  
tion. Refer to the Erase and Program Operations ta-  
bles in the AC Characteristics section for parameters,  
and Figure 19 section for timing diagrams.  
Sector erase is a six bus cycle operation. The sector  
erase command sequence is initiated by writing two  
unlock cycles, followed by a set-up command. Two ad-  
ditional unlock cycles are written, and are then fol-  
lowed by the address of the sector to be erased, and  
the sector erase command. Table 14 shows the ad-  
dress and data requirements for the sector erase com-  
mand sequence.  
Erase Suspend/Erase Resume  
Commands  
The Erase Suspend command, B0h, allows the sys-  
tem to interrupt a sector erase operation and then read  
data from, or program data to, any sector not selected  
for erasure. The bank address is required when writing  
this command. This command is valid only during the  
sector erase operation, including the 50 µs time-out  
period during the sector erase command sequence.  
The Erase Suspend command is ignored if written dur-  
ing the chip erase operation or Embedded Program  
algorithm.  
The device does not require the system to preprogram  
prior to erase. The Embedded Erase algorithm auto-  
matically programs and verifies the entire memory for  
an all zero data pattern prior to electrical erase. The  
system is not required to provide any controls or tim-  
ings during these operations.  
After the command sequence is written, a sector erase  
time-out of 50 µs occurs. During the time-out period,  
additional sector addresses and sector erase com-  
mands (for sectors within the same bank) may be writ-  
ten. Loading the sector erase buffer may be done in  
any sequence, and the number of sectors may be from  
one sector to all sectors. The time between these ad-  
ditional cycles must be less than 50 µs, otherwise era-  
sure may begin. Any sector erase address and  
command following the exceeded time-out may or may  
not be accepted. It is recommended that processor in-  
terrupts be disabled during this time to ensure all com-  
mands are accepted. The interrupts can be re-enabled  
after the last Sector Erase command is written. Any  
command other than Sector Erase or Erase Sus-  
pend during the time-out period resets that bank  
to the read mode. The system must rewrite the com-  
mand sequence and any additional addresses and  
commands.  
When the Erase Suspend command is written during  
the sector erase operation, the device requires a max-  
imum of 20 µs to suspend the erase operation. How-  
ever, when the Erase Suspend command is written  
during the sector erase time-out, the device immedi-  
ately terminates the time-out period and suspends the  
erase operation.  
After the erase operation has been suspended, the  
bank enters the erase-suspend-read mode. The sys-  
tem can read data from or program data to any sector  
not selected for erasure. (The device “erase sus-  
pends” all sectors selected for erasure.) Reading at  
any address within erase-suspended sectors pro-  
duces status information on DQ7–DQ0. The system  
can use DQ7, or DQ6 and DQ2 together, to determine  
if a sector is actively erasing or is erase-suspended.  
Refer to the Write Operation Status section for infor-  
mation on these status bits.  
The system can monitor DQ3 to determine if the sec-  
tor erase timer has timed out (See the section on DQ3:  
December 4, 2006 25686B10  
Am29DL32xG  
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