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AM29DL322GB90EI 参数 Datasheet PDF下载

AM29DL322GB90EI图片预览
型号: AM29DL322GB90EI
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位( 4米×8位/ 2的M× 16位) CMOS 3.0伏只,同时操作闪存 [32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory]
分类和应用: 闪存
文件页数/大小: 58 页 / 1293 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
data protection measures prevent accidental erasure  
COMMON FLASH MEMORY INTERFACE  
(CFI)  
or programming, which might otherwise be caused by  
spurious system level signals during VCC power-up  
and power-down transitions, or from system noise.  
The Common Flash Interface (CFI) specification out-  
lines device and host system software interrogation  
handshake, which allows specific vendor-specified  
software algorithms to be used for entire families of  
devices. Software support can then be device-inde-  
pendent, JEDEC ID-independent, and forward- and  
backward-compatible for the specified flash device  
families. Flash vendors can standardize their existing  
interfaces for long-term compatibility.  
Low VCC Write Inhibit  
When VCC is less than VLKO, the device does not ac-  
cept any write cycles. This protects data during VCC  
power-up and power-down. The command register  
and all internal program/erase circuits are disabled,  
and the device resets to the read mode. Subsequent  
writes are ignored until VCC is greater than VLKO. The  
system must provide the proper signals to the control  
pins to prevent unintentional writes when VCC is  
This device enters the CFI Query mode when the sys-  
tem writes the CFI Query command, 98h, to address  
55h in word mode (or address AAh in byte mode), any  
time the device is ready to read array data. The  
system can read CFI information at the addresses  
given in Tables 10–13. To terminate reading CFI data,  
the system must write the reset command. The CFI  
Query mode is not accessible when the device is exe-  
cuting an Embedded Program or Embedded Erase al-  
gorithm.  
greater than VLKO  
.
Write Pulse “Glitch” Protection  
Noise pulses of less than 5 ns (typical) on OE#, CE#  
or WE# do not initiate a write cycle.  
Logical Inhibit  
Write cycles are inhibited by holding any one of OE# =  
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,  
CE# and WE# must be a logical zero while OE# is a  
logical one.  
The system can also write the CFI query command  
when the device is in the autoselect mode. The device  
enters the CFI query mode, and the system can read  
CFI data at the addresses given in Tables 10–13. The  
system must write the reset command to return the  
device to reading array data.  
Power-Up Write Inhibit  
If WE# = CE# = VIL and OE# = VIH during power up,  
the device does not accept commands on the rising  
edge of WE#. The internal state machine is automati-  
cally reset to the read mode on power-up.  
For further information, please refer to the CFI Specifi-  
cation and CFI Publication 100, available via the World  
Wide Web at http://www.amd.com/flash/cfi. Alterna-  
tively, contact an AMD representative for copies of  
these documents.  
Table 10. CFI Query Identification String  
Addresses  
Addresses  
(Word Mode)  
(Byte Mode)  
Data  
Description  
10h  
11h  
12h  
20h  
22h  
24h  
0051h  
0052h  
0059h  
Query Unique ASCII string “QRY”  
13h  
14h  
26h  
28h  
0002h  
0000h  
Primary OEM Command Set  
15h  
16h  
2Ah  
2Ch  
0040h  
0000h  
Address for Primary Extended Table  
17h  
18h  
2Eh  
30h  
0000h  
0000h  
Alternate OEM Command Set (00h = none exists)  
Address for Alternate OEM Extended Table (00h = none exists)  
19h  
1Ah  
32h  
34h  
0000h  
0000h  
22  
Am29DL32xG  
25686B10 December 4, 2006  
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