D A T A S H E E T
DC CHARACTERISTICS
CMOS Compatible
Parameter Description
Test Conditions (Note 1)
Min
Typ
Max
1
Unit
µA
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCCmax
VOUT = VSS to VCC, VCC = VCCmax
ILO
Output Leakage Current
1
µA
VCC Active Burst Read Current
(Note 6)
ICCB
CE# = VIL, OE# = VIL
25
30
mA
5 MHz
CE# = VIL, OE# = VIH
1 MHz
12
3.5
15
16
5
mA
mA
mA
µA
VCC Active Asynchronous Read
Current
ICC1
ICC2
ICC3
ICC4
VCC Active Write Current (Note 3)
VCC Standby Current (Note 4)
VCC Reset Current
CE# = VIL, OE# = VIH, VPP = VIH
CE# = VIH, RESET# = VIH
RESET# = VIL, CLK = VIL
40
10
10
0.2
0.2
µA
VCC Active Current
(Read While Write)
ICC5
CE# = VIL, OE# = VIL
40
60
mA
VPP
7
5
15
10
mA
mA
V
Accelerated Program Current
(Note 5)
CE# = VIL, OE# = VIH,
VPP = 12.0 0.5 V
IPP
VCC
VIL
VIH
Input Low Voltage
–0.5
0.4
Input High Voltage
VCC – 0.4
VCC + 0.2
0.1
V
VOL
VOH
VID
Output Low Voltage
IOL = 100 µA, VCC = VCC min
IOH = –100 µA, VCC = VCC min
V
Output High Voltage
VCC – 0.1
11.5
V
Voltage for Accelerated Program
Low VCC Lock-out Voltage
12.5
1.4
V
VLKO
1.0
V
Note:
1. Maximum ICC specifications are tested with VCC = VCCmax.
2. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Device enters automatic sleep mode when addresses are stable for tACC + 60 ns. Typical sleep mode current is equal to ICC3
5. Total current during accelerated programming is the sum of VPP and VCC currents.
6. Specifications assume 8 I/Os switching.
.
May 8, 2006 25692A2
Am29BDS643G
31
SPANSION [ SPANSION ]
