D A T A S H E E T
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Test Conditions
Min
Typ
Max
±1.0
35
Unit
µA
VIN = VSS to 5.5 V,
VCC = VCC max
ILI
Input Load Current
ILIT
ILO
A9 Input Load Current
Output Leakage Current
VCC = VCC max; A9 = 12.5 V
µA
VOUT = VSS to 5.5 V,
CC = VCC max
±1.0
µA
V
VCC Active Read Current
(Notes 1, 2)
ICC1
CE# = VIL, OE# = VIH, 5 MHz
9
16
mA
VCC Active Write Current
(Notes 2, 3, 6)
ICC2
ICC3
ICC4
CE# = VIL, OE# = VIH
20
3
30
10
10
mA
µA
µA
VCC Standby Current (Note 2)
CE#, RESET# = VCC±0.3 V
RESET# = VSS ± 0.3 V
VCC Standby Current During
Reset (Note 2)
3
OE# = VIH
3
10
20
30
35
40
0.8
5.5
µA
µA
mA
mA
mA
V
Automatic Sleep Mode
(Notes 2, 4)
VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V
ICC5
OE# = VIL
25 MHz
33 MHz
40 MHz
8
15
20
25
VCC Burst Mode Read Current
(Notes 2, 5)
CE# = VIL,
OE# = VIH
ICC6
VIL
VIH
Input Low Voltage
Input High Voltage
–0.5
0.7 x VCC
V
Voltage for Autoselect and
Temporary Sector Unprotect
VID
VCC = 3.3 V
11.5
12.5
0.45
V
VOL
VOH1
VOH2
Output Low Voltage
IOL = 4.0 mA, VCC = VCC min
IOH = –2.0 mA, VCC = VCC min
IOH = –100 µA, VCC = VCC min
V
V
0.85 x VCC
VCC–0.4
Output High Voltage
Low VCC Lock-Out Voltage (Note
4)
VLKO
2.3
2.5
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical VCC is 3.0 V.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode
current is 3 µA.
5. 32-word average.
6. Not 100% tested.
26
Am29BL802C
22371C7 November 3, 2006
SPANSION [ SPANSION ]
