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AM29BDS640GT93WSF 参数 Datasheet PDF下载

AM29BDS640GT93WSF图片预览
型号: AM29BDS640GT93WSF
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 4MX16, 20ns, PBGA80, 11 X 12 MM, FBGA-80]
分类和应用: 内存集成电路
文件页数/大小: 62 页 / 863 K
品牌: SPANSION [ SPANSION ]
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A D V A N C E I N F O R M A T I O N  
ERASE AND PROGRAMMING PERFORMANCE  
Parameter  
Typ (Note 1)  
Max (Note 2)  
Unit  
Comments  
32 Kword  
8 Kword  
0.4  
0.4  
54  
5
5
Sector Erase Time  
s
Excludes 00h programming  
prior to erasure (Note 4)  
Chip Erase Time  
s
µs  
µs  
s
Excludes system level  
overhead (Note 5)  
Word Programming Time  
11.5  
4
210  
120  
144  
48  
Accelerated Word Programming Time  
Chip Programming Time (Note 3)  
Excludes system level  
overhead (Note 5)  
48  
16  
Accelerated Chip Programming Time  
s
Notes:  
1. Typical program and erase times assume the following conditions: 25°C, 1.8 V VCC, 1 million cycles. Additionally,  
programming typicals assumes a checkerboard pattern.  
2. Under worst case conditions of 90°C, VCC = 1.8 V, 100,000 cycles.  
3. The typical chip programming time is considerably less than the maximum chip programming time listed.  
4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.  
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See  
Table 13 for further information on command definitions.  
6. The device has a minimum erase and program cycle endurance of 1 million cycles.  
DATA RETENTION  
Parameter  
Test Conditions  
150°C  
Min  
10  
Unit  
Years  
Years  
Minimum Pattern Data Retention Time  
125°C  
20  
60  
Am29BDS640G  
May 9, 2002