A D V A N C E I N F O R M A T I O N
ORDERING INFORMATION
The order number (Valid Combination) is formed by the following:
Am29BDS640G WS
T
D
8
I
TEMPERATURE RANGE
Industrial (–40°C to +85°C)
I
=
PACKAGE TYPE
WS = 80-Ball Fine-Pitch Grid Array (FBGA)
0.80 mm pitch, 11 x 12 mm package (FBE080)
VIO AND HANDSHAKING FEATURES
8
9
3
4
=
=
=
=
1.8 V VIO, reduced wait-state handshaking
1.8 V VIO, standard handshaking
3 V VIO, reduced wait-state handshaking
3 V VIO, standard handshaking
CLOCK RATE/ASYNCHRONOUS SPEED
D
C
=
=
54 MHz/70 ns
40 MHz/90 ns
BOOT CODE SECTOR ARCHITECTURE
T
B
=
=
Top boot sector
Bottom boot sector
DEVICE NUMBER/DESCRIPTION
Am29BDS640G
64 Megabit (4 M x 16-Bit) CMOS Flash Memory, Simultaneous Read/Write,
Burst Mode Flash Memory, 1.8 Volt-only Read, Program, and Erase
Valid Combinations
Burst Frequency
VIO Range
(MHz)
Order Number
Package Marking
Am29BDS640GTD8
Am29BDS640GBD8
BS640GTD8V
BS640GBD8V
54
Am29BDS640GTD9
Am29BDS640GBD9
BS640GTD9V
BS640GBD9V
WSI
1.65–1.95V
Am29BDS640GTC8
Am29BDS640GBC8
BS640GTC8V
BS640GBC8V
40
54
40
Am29BDS640GTC9
Am29BDS640GBC9
BS640GTC9V
BS640GBC9V
Am29BDS640GTD3
Am29BDS640GBD3
BS640GTD3V
BS640GBD3V
Am29BDS640GTD4
Am29BDS640GBD4
BS640GTD4V
BS640GBD4V
WSI
2.7–3.15V
Am29BDS640GTC3
Am29BDS640GBC3
BS640GTC3V
BS640GBC3V
Am29BDS640GTC4
Am29BDS640GBC4
BS640GTC4V
BS640GBC4V
Valid Combinations
Valid Combinations list configurations planned to be supported in
volume for this device. Consult the local AMD sales office to con-
firm availability of specific valid combinations and to check on
newly released combinations.
Note:For the Am29BDS640G, the last digit of the speed
grade specifies the VIO range of the device. Speed options
ending in “8” and “9” (e.g., D8, D9) indicate a 1.8 Volt VIO
range. Speed grades ending in “3” and “4” (e.g., D3, D4)
indicate a 3.0 Volt VIO range.
10
Am29BDS640G
October 31, 2002
SPANSION [ SPANSION ]
