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AM29BDS640GBD9WSI 参数 Datasheet PDF下载

AM29BDS640GBD9WSI图片预览
型号: AM29BDS640GBD9WSI
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(4M ×16位) CMOS 1.8伏只同步读/写,突发模式闪存 [64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory]
分类和应用: 闪存内存集成电路
文件页数/大小: 65 页 / 845 K
品牌: SPANSION [ SPANSION ]
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A D V A N C E I N F O R M A T I O N  
enabling the system to read the boot-up firmware from  
Standby Mode  
the Flash memory.  
When the system is not reading or writing to the device,  
it can place the device in the standby mode. In this  
mode, current consumption is greatly reduced, and the  
outputs are placed in the high impedance state, inde-  
pendent of the OE# input.  
If RESET# is asserted during a program or erase oper-  
ation, the device requires a time of tREADY (during  
Embedded Algorithms) before the device is ready to  
read data again. If RESET# is asserted when a  
program or erase operation is not executing, the reset  
operation is completed within a time of tREADY (not  
during Embedded Algorithms). The system can read  
data tRH after RESET# returns to VIH.  
The device enters the CMOS standby mode when the  
CE# and RESET# inputs are both held at VCC ± 0.2 V.  
The device requires standard access time (tCE) for  
read access, before it is ready to read data.  
Refer to the AC Characteristics tables for RESET#  
parameters and to Figure 20, “Reset Timings,” on  
page 47 for the timing diagram.  
If the device is deselected during erasure or program-  
ming, the device draws active current until the opera-  
tion is completed.  
Output Disable Mode  
ICC3 in the DC Characteristics table represents the  
standby current specification.  
When the OE# input is at VIH, output from the device is  
disabled. The outputs are placed in the high imped-  
ance state.  
Automatic Sleep Mode  
The automatic sleep mode minimizes Flash device  
energy consumption. While in asynchronous mode, the  
device automatically enables this mode when  
addresses remain stable for tACC + 60 ns. The auto-  
matic sleep mode is independent of the CE#, WE#, and  
OE# control signals. Standard address access timings  
provide new data when addresses are changed. While  
in sleep mode, output data is latched and always avail-  
able to the system. While in synchronous mode, the  
device automatically enables this mode when either  
the first active CLK edge occurs after tACC or the CLK  
runs slower than 5MHz. Note that a new burst opera-  
tion is required to provide new data.  
Hardware Data Protection  
The command sequence requirement of unlock cycles  
for programming or erasing provides data protection  
against inadvertent writes (refer to Table 14, “Com-  
mand Definitions,” on page 29 for command defini-  
tions).  
The device offers two types of data protection at the  
sector level:  
The sector lock/unlock command sequence dis-  
ables or re-enables both program and erase opera-  
tions in any sector.  
ICC4 in the “DC Characteristics” section on page 35  
represents the automatic sleep mode current specifica-  
tion.  
When WP# is at VIL, sectors 0 and 1 (bottom boot)  
or sectors 132 and 133 (top boot) are locked.  
When ACC is at VIL, all sectors are locked.  
The following hardware data protection measures  
prevent accidental erasure or programming, which  
might otherwise be caused by spurious system level  
signals during VCC power-up and power-down transi-  
tions, or from system noise.  
RESET#: Hardware Reset Input  
The RESET# input provides a hardware method of  
resetting the device to reading array data. When  
RESET# is driven low for at least a period of tRP, the  
device immediately terminates any operation in  
progress, tristates all outputs, resets the configuration  
register, and ignores all read/write commands for the  
duration of the RESET# pulse. The device also resets  
the internal state machine to reading array data. The  
operation that was interrupted should be reinitiated  
once the device is ready to accept another command  
sequence, to ensure data integrity.  
Write Protect (WP#)  
The Write Protect (WP#) input provides a hardware  
method of protecting data without using VID.  
If the system asserts VIL on the WP# pin, the device  
disables program and erase functions in sectors 0 and  
1 (bottom boot) or sectors 132 and 133 (top boot).  
If the system asserts VIH on the WP# pin, the device  
reverts to whether the two outermost 8K Byte boot  
sectors were last set to be protected or unprotected.  
Current is reduced for the duration of the RESET#  
pulse. When RESET# is held at VSS ± 0.2 V, the device  
draws CMOS standby current (ICC4). If RESET# is held  
at VIL but not within VSS ± 0.2 V, the standby current will  
be greater.  
Note that the WP# pin must not be left floating or  
unconnected; inconsistent behavior of the device may  
result.  
RESET# may be tied to the system reset circuitry. A  
system reset would thus also reset the Flash memory,  
14  
Am29BDS640G  
October 31, 2002