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AM29BDS640GBD9WSI 参数 Datasheet PDF下载

AM29BDS640GBD9WSI图片预览
型号: AM29BDS640GBD9WSI
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(4M ×16位) CMOS 1.8伏只同步读/写,突发模式闪存 [64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory]
分类和应用: 闪存内存集成电路
文件页数/大小: 65 页 / 845 K
品牌: SPANSION [ SPANSION ]
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A D V A N C E I N F O R M A T I O N  
INPUT/OUTPUT DESCRIPTIONS  
A21-A0  
=
Address inputs  
AVD#  
=
Address Valid input. Indicates to  
device that the valid address is  
present on the address inputs  
(A21–A0).  
DQ15-DQ0 = Data input/output  
CE#  
OE#  
=
=
Chip Enable input. Asynchronous  
relative to CLK for the Burst mode.  
Low = for asynchronous mode,  
indicates valid address; for burst  
mode, causes starting address to be  
latched.  
Output Enable input. Asynchronous  
relative to CLK for the Burst mode.  
WE#  
VCC  
=
=
Write Enable input.  
High = device ignores address inputs  
Device Power Supply  
(1.65 – 1.95 V).  
RESET#  
WP#  
=
=
Hardware reset input. Low = device  
resets and returns to reading array  
data  
VIO  
=
Input & Output Buffer Power Supply  
(either 1.65 – 1.95 V or 2.7 – 3.15 V).  
Hardware write protect input. At VIL,  
disables program and erase functions  
in the two outermost sectors. Should  
be at VIH for all other conditions.  
VSS  
=
=
=
=
Ground  
VSSIO  
NC  
Output Buffer Ground  
No Connect; not connected internally  
ACC  
=
At VID, accelerates programming;  
automatically places device in unlock  
bypass mode. At VIL, locks all sectors.  
Should be at VIH for all other  
conditions.  
RDY  
Ready output; indicates the status of  
the Burst read. Low = data not valid at  
expected time. High = data valid.  
CLK  
=
CLK is not required in asynchronous  
mode. In burst mode, after the initial  
word is output, subsequent active  
edges of CLK increment the internal  
address counter.  
LOGIC SYMBOL  
22  
A21–A0  
16  
DQ15–DQ0  
CLK  
WP#  
ACC  
CE#  
OE#  
WE#  
RDY  
RESET#  
AVD#  
October 31, 2002  
Am29BDS640G  
9