D A T A S H E E T
DC CHARACTERISTICS
CMOS COMPATIBLE
Parameter Description
Test Conditions Note: 1 & 2
Min
Typ
Max
1
Unit
µA
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCCmax
VOUT = VSS to VCC, VCC = VCCmax
ILO
Output Leakage Current
1
µA
CE# = VIL, OE# = VIH,
WE# = VIH, burst length 54 MHz
= 8
9
8
7
17
15.5
14
mA
mA
mA
CE# = VIL, OE# = VIH,
WE# = VIH, burst length 54 MHz
= 16
ICCB
VCC Active burst Read Current
CE# = VIL, OE# = VIH,
WE# = VIH, burst length 54 MHz
= Continuous
IIO1
VIO Non-active Output
OE# = VIH
1
40
30
15
5
µA
mA
mA
mA
mA
µA
10 MHz
20
10
3.5
15
0.2
1
VCC Active Asynchronous Read
Current (Note 3)
CE# = VIL, OE# = VIH,
WE# = VIH
ICC1
5 MHz
1 MHz
CE# = VIL, OE# = VIH, ACC = VIH
CE# = RESET# = VCC 0.2 V
RESET# = VIL, CLK = VIL
ICC2
ICC3
ICC4
VCC Active Write Current (Note 4)
VCC Standby Current (Note 5)
VCC Reset Current
40
40
40
µA
VCC Active Current
(Read While Write)
ICC5
ICC6
CE# = VIL, OE# = VIH
CE# = VIL, OE# = VIH
25
60
mA
VCC Sleep Current
1
7
5
40
15
µA
mA
mA
V
VACC
Accelerated Program Current
(Note 6)
CE# = VIL, OE# = VIH,
VACC = 12.0 0.5 V
IACC
VCC
10
VIL
VIH
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
VIO = 1.8 V
–0.4
0.4
VIO = 1.8 V
VIO – 0.4
VIO + 0.4
0.1
V
VOL
VOH
IOL = 100 µA, VIO = VCC = VCC min
V
IOH = –100 µA, VIO = VCC = VCC min VIO – 0.1
V
Voltage for Autoselect and
Temporary Sector Unprotect
VID
VCC = 1.8 V
11.5
12.5
V
VHH
Voltage for Accelerated Program
Low VCC Lock-out Voltage
11.5
1.0
12.5
1.4
V
V
VLKO
Note:
1. Maximum ICC specifications are tested with VCC = VCCmax.
2. VIO= VCC
3. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
4. ICC active while Embedded Erase or Embedded Program is in progress.
5. Device enters automatic sleep mode when addresses are stable for tACC + 60 ns. Typical sleep mode current is equal to ICC3
6. Total current during accelerated programming is the sum of VACC and VCC currents.
.
54
Am29BDS128H/Am29BDS640H
27024B3 May 10, 2006
SPANSION [ SPANSION ]
