S U P P L E M E N T
REVISION SUMMARY
Revision A (December 10, 2002)
Initial release.
Terms and Conditions of sale for AMD Non-volatile
memory die
Revised text following first paragraph.
Revision A + 1 (April 21, 2003)
Distinctive Characteristics
Revision A + 2 (May 9, 2003)
Performance Characteristics
Architectural Advantages, Single power supply opera-
tion: changed 2.7 Volt to 2.75 Volt.
Ultra low power consumption: changed Standby mode:
CMOS to 250 µA
Performance Characteristics, Ultra low power con-
sumption: changed Standby mode: CMOS to 60 µA
max.
Product Selector Guide
Changed t
for 65A (40 MHz) to 67 ns.
ACC
Product Selector Guide
AC Characteristics for KGD Devices at 145C, CMOS
Compatible
Removed Min Initial Clock Delay
Changed I
Note 1.
Max to 250, Added I
, I
, added
CC5
CC7 CC8
Absolute Maximum Ratings
Added this new section.
Revision A + 3 (July 16, 2003)
Pad Description table
DC Operating Conditions
Changed V from 2.5 V – 2.7 V to 2.5 V – 2.75 V.
CC
Pads Relative to V : Corrected signal names for pads
CC
Added V Supply Voltages.
IO
35 to 51.
AC Characteristics
Revision A + 4 (September 9, 2003)
Packaging Information
CMOS Compatible: changed I
Max to 60 µA.
CC5
Erase/Program Operation: changed t speed to 2 ns.
DH
Added Embossed Tape and Reel Packaging.
Alternate CE# Controlled Erase/Program Operation:
changed t speed to 2 ns.
DH
Trademarks
Copyright © 2004 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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Am29BDD160G Known Good Die—Die Revision 1
SPANSION [ SPANSION ]
