S U P P L E M E N T
DC CHARACTERISTICS
FOR KGD DEVICES AT 145°C
CMOS Compatible
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
V
Active Asynchronous Read
CC
Current
I
CE# = V , OE# = V
IL
1 MHz
25
50
mA
CC1
IL
V
0.3 V
= V
, CE# = V
CC
CCmax CC
I
I
I
(Note 1)
V
V
Standby Current (CMOS)
15
250
250
250
µA
µA
µA
CC5
CC7
CC8
CC
(Note 1)
Reset Current
Reset = V
CC
IL
V
= V
0.3 V, V = V
IL SS
IH
CC
(Note 1) Automatic Sleep Mode Current
0.3 V
Notes:
1. Current maximum has been significantly increased (x27) from KGD Supplement Revision A, Amendment 1, dated April 21,
2003.
2. The I current listed includes both the DC operating current and the frequency dependent component.
CC
AC CHARACTERISTICS
Erase/Program Operation – KGD Devices
at 145°C
Parameter
JEDEC Std
Description
All Speed Options
Unit
t
Data Hold from WE# Rising Edge
min
2
ns
DH
Alternate CE# Controlled Erase/Program
Operation – KGD Devices at 145°C
Parameter
JEDEC Std
Description
All Speed Options
Unit
t
Data Hold from WE# Rising Edge
min
2
ns
DH
14
Am29BDD160G Known Good Die—Die Revision 1
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