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AM26LV400BB-55REE 参数 Datasheet PDF下载

AM26LV400BB-55REE图片预览
型号: AM26LV400BB-55REE
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K的×8位/ 256千×16位) CMOS 3.0伏只引导扇区闪存 [4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 48 页 / 1129 K
品牌: SPANSION [ SPANSION ]
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D A T A S H E E T  
DQ7 or DQ6 status bits, just as in the standard pro-  
gram operation. See “Write Operation Status” for more  
information.  
START  
The system may also write the autoselect command  
sequence when the device is in the Erase Suspend  
mode. The device allows reading autoselect codes  
even at addresses within erasing sectors, since the  
codes are not stored in the memory array. When the  
device exits the autoselect mode, the device reverts to  
the Erase Suspend mode, and is ready for another  
valid operation. See “Autoselect Command Sequence”  
for more information.  
Write Erase  
Command Sequence  
Data Poll  
from System  
Embedded  
Erase  
algorithm  
in progress  
The system must write the Erase Resume command  
(address bits are “don’t care”) to exit the erase sus-  
pend mode and continue the sector erase operation.  
Further writes of the Resume command are ignored.  
Another Erase Suspend command can be written after  
the device has resumed erasing.  
No  
Data = FFh?  
Yes  
Erasure Completed  
Notes:  
1. See Table 5 for erase command sequence.  
2. See “DQ3: Sector Erase Timer” for more information.  
Figure 4. Erase Operation  
18  
Am29LV400B  
21523D4 December 4, 2006