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U632H64BS2K25G1 参数 Datasheet PDF下载

U632H64BS2K25G1图片预览
型号: U632H64BS2K25G1
PDF下载: 下载PDF文件 查看货源
内容描述: PowerStore 8K ×8的nvSRAM [PowerStore 8K x 8 nvSRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 15 页 / 410 K
品牌: SIMTEK [ SIMTEK CORPORATION ]
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U632H64  
Disabling Automatic STORES: STORE Cycle Inhibit and Automatic Power Up RECALL  
VCAP  
5.0 V  
VSWITCH  
t
STORE inhibit  
Power Up  
RECALL  
(24)  
tRESTORE  
Power  
Supply  
VCAP  
VCCX  
HSB  
VCCX  
28  
Power  
Supply  
VCAP  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
10 KΩ  
1
2
3
4
1
2
3
4
(optional,  
see description HSB  
nonvolatile store)  
27  
26  
25  
10 KΩ  
(optional,  
see description HSB  
nonvolatile store)  
HSB  
24  
23  
22  
21  
20  
5
6
7
8
5
6
7
8
+
0.1 μF  
100 μF  
0.1 μF  
Bypass  
Bypass  
20%  
9
9
10  
11  
10  
11  
19  
18  
12  
13  
14  
12  
13  
14  
17  
16  
15  
17  
16  
15  
VSS  
VSS  
Figure 1: Automatic STORE Operation  
Figure 2: Disabling Automatic STORES  
Schematic Diagram  
Schematic Diagram  
Low Average Active Power  
The U632H64 has been designed to draw significantly 1. CMOS or TTL input levels  
less power when E is LOW (chip enabled) but the 2. the time during which the chip is disabled (E HIGH)  
access cycle time is longer than 55 ns.  
When E is HIGH the chip consumes only standby cur- 4. the ratio of READs to WRITEs  
rent. 5. the operating temperature  
3. the cycle time for accesses (E LOW)  
The overall average current drawn by the part depends 6. the power supply voltage level  
on the following items:  
The information describes the type of component and shall not be considered as assured characteristics. Terms of  
delivery and rights to change design reserved.  
August 15, 2006  
STK Control #ML0047  
13  
Rev 1.1  
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