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STK16CA8-WF25I 参数 Datasheet PDF下载

STK16CA8-WF25I图片预览
型号: STK16CA8-WF25I
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8 AutoStorePlus ™的nvSRAM QuantumTrap ™ CMOS非易失性静态RAM [128K x 8 AutoStorePlus™ nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 311 K
品牌: SIMTEK [ SIMTEK CORPORATION ]
 浏览型号STK16CA8-WF25I的Datasheet PDF文件第1页浏览型号STK16CA8-WF25I的Datasheet PDF文件第3页浏览型号STK16CA8-WF25I的Datasheet PDF文件第4页浏览型号STK16CA8-WF25I的Datasheet PDF文件第5页浏览型号STK16CA8-WF25I的Datasheet PDF文件第6页浏览型号STK16CA8-WF25I的Datasheet PDF文件第7页浏览型号STK16CA8-WF25I的Datasheet PDF文件第8页浏览型号STK16CA8-WF25I的Datasheet PDF文件第9页  
STK16CA8  
ABSOLUTE MAXIMUM RATINGSa  
Note a: Stresses greater than those listed under “Absolute Maximum  
Ratings” may cause permanent damage to the device. This is a  
stress rating only, and functional operation of the device at con-  
ditions above those indicated in the operational sections of this  
specification is not implied. Exposure to absolute maximum rat-  
ing conditions for extended periods may affect reliability.  
Power Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . –0.5V to +3.9V  
Voltage on Input Relative to VSS . . . . . . . . . .0.5V to (V + 0.5V)  
Voltage on DQ0-7 . . . . . . . . . . . . . . . . . . . . . .0.5V to (V + 0.5V)  
CC  
Temperature under Bias. . . . . . . . . . . . . . . . . . . . . .–55°C to 125°C  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .–65°C to 150°C  
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W  
DC Output Current (1 output at a time, 1s duration) . . . . . . . 15mA  
CC  
DC CHARACTERISTICS  
(VCC = 3.0V +20%, -10%)  
COMMERCIAL  
INDUSTRIAL  
SYMBOL  
PARAMETER  
UNITS  
NOTES  
MIN  
MAX  
MIN  
MAX  
b
I
Average V Current  
50  
40  
35  
55  
45  
35  
mA  
mA  
mA  
t
t
t
= 25ns  
= 35ns  
= 45ns  
CC  
CC  
AVAV  
AVAV  
AVAV  
1
c
I
I
Average V Current during STORE  
1.5  
1.5  
mA  
All Inputs Don’t Care, V = max  
CC  
CC  
CC  
CC  
2
b
Average V Current at t  
CC  
= 200ns  
W (V – 0.2V)  
AVAV  
CC  
3
5
5
mA  
3V, 25°C, Typical  
All Others Cycling, CMOS Levels  
d
I
I
I
V
Standby Current  
E (V – 0.2V)  
CC  
SB  
CC  
1
1
mA  
µA  
µA  
(Standby, Stable CMOS Input Levels)  
All Others V 0.2V or (V – 0.2V)  
IN CC  
Input Leakage Current  
V
V
= max  
CC  
ILK  
±1  
±1  
±1  
±1  
= V to V  
CC  
IN  
SS  
Off-State Output Leakage Current  
V
V
= max  
CC  
OLK  
= V to V , E or G V  
IH  
IN  
SS  
CC  
V
V
V
V
Input Logic “1” Voltage  
Input Logic “0” Voltage  
Output Logic “1” Voltage  
Output Logic “0” Voltage  
Operating Temperature  
2.0  
V
+ .3  
2.0  
V + .3  
CC  
V
V
All Inputs  
All Inputs  
IH  
CC  
V
– .5  
0.8  
V – .5  
SS  
0.8  
IL  
SS  
2.4  
2.4  
V
I
I
=–2mA  
= 4mA  
OH  
OL  
OUT  
OUT  
0.4  
70  
0.4  
85  
V
T
0
40  
°C  
A
Note b: ICC and ICC3 are dependent on output loading and cycle rate. The specified values are obtained with outputs unloaded.  
Note c: ICC1 is the average current required for the duration of the STORE cycle (tSTORE ).  
Note d: E 2VIH will not produce standby current levels until any nonvolatile cycle in progress has timed out.  
AC TEST CONDITIONS  
Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0V to 3V  
Input Rise and Fall Times. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5ns  
Input and Output Timing Reference Levels . . . . . . . . . . . . . . . 1.5V  
Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 1  
CAPACITANCEe  
(TA = 25°C, f = 1.0MHz)  
3.0V  
SYMBOL  
PARAMETER  
Input Capacitance  
Output Capacitance  
MAX  
UNITS  
CONDITIONS  
V = 0 to 3V  
V = 0 to 3V  
C
C
5
7
pF  
IN  
577 Ohms  
pF  
OUT  
Note e: These parameters are guaranteed but not tested.  
OUTPUT  
30 pF  
789 Ohms  
INCLUDING  
SCOPE AND  
FIXTURE  
Figure 1: AC Output Loading  
September 2003  
2
Document Control # ML0023 rev 0.1  
 
 
 
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