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STK16CA8-WF25I 参数 Datasheet PDF下载

STK16CA8-WF25I图片预览
型号: STK16CA8-WF25I
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8 AutoStorePlus ™的nvSRAM QuantumTrap ™ CMOS非易失性静态RAM [128K x 8 AutoStorePlus™ nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 311 K
品牌: SIMTEK [ SIMTEK CORPORATION ]
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STK16CA8  
valid. After the tSTORE cycle time has been fulfilled,  
the SRAM will again be activated for READ and  
WRITE operation.  
sequence has been performed, regardless of device  
power cycles.  
The AutoStore Inhibit can be disabled by initiating  
an AutoStore Inhibit Off sequence. A sequence of  
read operations is performed in a manner similar to  
the software RECALL initiation. To initiate the  
AutoStore Inhibit Off sequence, the following  
sequence of E controlled read operations must be  
performed:  
SOFTWARE NONVOLATILE RECALL  
A software RECALL cycle is initiated with a sequence  
of READ operations in a manner similar to the soft-  
ware STORE initiation. To initiate the RECALL cycle,  
the following sequence of E controlled READ opera-  
tions must be performed:  
1. Read address  
2. Read address  
3. Read address  
4. Read address  
5. Read address  
6. Read address  
4E38 (hex)  
B1C7 (hex)  
83E0 (hex)  
7C1F (hex)  
703F (hex)  
4B46 (hex)  
Valid READ  
1. Read address  
2. Read address  
3. Read address  
4. Read address  
5. Read address  
6. Read address  
4E38 (hex)  
B1C7 (hex)  
83E0 (hex)  
7C1F (hex)  
703F (hex)  
4C63 (hex)  
Valid READ  
Valid READ  
Valid READ  
Valid READ  
Valid READ  
Valid READ  
Valid READ  
Valid READ  
Valid READ  
AutoStore Inhibit Off  
Initiate RECALL cycle  
Internally, RECALL is a two-step procedure. First, the  
SRAM data is cleared, and second, the nonvolatile  
information is transferred into the SRAM cells. After  
the tRECALL cycle time the SRAM will once again be  
ready for READ and WRITE operations. The RECALL  
operation in no way alters the data in the nonvolatile  
elements. The nonvolatile data can be recalled an  
unlimited number of times.  
LOW AVERAGE ACTIVE POWER  
The STK16CA8 draws significantly less current  
when it is cycled at times longer than 50ns. Figure 3  
shows the relationship between ICC and READ cycle  
time. Worst-case current consumption is shown for  
both CMOS and TTL input levels (commercial tem-  
perature range, VCC = 3.6V, 100% duty cycle on chip  
enable). Figure 4 shows the same relationship for  
WRITE cycles. If the chip enable duty cycle is less  
than 100%, only standby current is drawn when the  
chip is disabled. The overall average current drawn  
by the STK16CA8 depends on the following items:  
1) CMOS vs. TTL input levels; 2) the duty cycle of  
chip enable; 3) the overall cycle rate for accesses;  
4) the ratio of READs to WRITEs; 5) the operating  
HARDWARE PROTECT  
The STK16CA8 offers hardware protection against  
inadvertent STORE operation and SRAM WRITEs dur-  
ing low-voltage conditions. When VCCX < VSWITCH, all  
externally initiated STORE operations and SRAM  
WRITEs will be inhibited.  
temperature; 6) the V level; and 7) I/O loading.  
PREVENTING STORES  
cc  
The AutoStore™ function can be disabled on the fly  
by initiating an AutoStore Inhibit sequence. A  
sequence of read operations is performed in a man-  
ner similar to the software STORE initiation. To ini-  
tiate the AutoStore Inihibit sequence, the following  
sequence of E controlled read operations must be  
performed:  
1. Read address  
2. Read address  
3. Read address  
4. Read address  
5. Read address  
6. Read address  
4E38 (hex)  
B1C7 (hex)  
83E0 (hex)  
7C1F (hex)  
703F (hex)  
8B45 (hex)  
Valid READ  
Valid READ  
Valid READ  
Valid READ  
Valid READ  
AutoStore Inhibit  
Once the AutoStore™ inhibit has been initiated, it  
will remain active until an AutoStore™ inhibit off  
September 2003  
9
Document Control # ML0023 rev 0.1