Si3220/Si3225
Table 20. Register and RAM Locations Used for Loop Monitoring
Parameter
Register/RAM
Mnemonic
Register/RAM
Bits
Measurement
Range
LSB Size
4.907 mV
4.907 mV
4.907 mV
Effective
Resolution
Loop Voltage Sense
VLOOP
VLOOP[15:0]
0 to 64.07 V
64.07 to 160.173 V
251 mV
628 mV
(V
– V
)
RING
TIP
TIP Voltage Sense
VTIP
VTIP[15:0]
0 to 64.07 V
64.07 to 160.173 V
251 mV
628 mV
RING Voltage Sense
VRING
VRING[15:0]
0 to 64.07 V
64.07 to 160.173 V
251 mV
628 mV
Loop Current Sense
ILOOP
VBAT
ILOOP[15:0]
VBAT[15:0]
0 to 101.09 mA
3.097 µA
500 µA*
Battery Voltage Sense
0 to 63.3 V
0 to 160.173 V
4.907 mV
251 mV
628 mV
Longitudinal Current
Sense
ILONG
VRNGNG
IRNGNG
ILONG[15:0]
VRNGNG[15:0]
IRNGNG[15:0]
0 to 101.09 mA
3.097 µA
10.172 mV
20.3 µA
500 µA*
1.302 V
2.6 mA
External Ringing Gen-
erator Voltage Sense
332.04 V
External Ringing Gen-
erator Current Sense
662.83 mA
*Note: ILOOP and ILONG are calculated values based on measured IQ1–IQ4 currents. The resulting effective resolution is
approximately 500 µA.
ITIPN
ITIPP
IRINGP
IRINGN
Q4
Q1
Q2
Q3
RBQ5
TIP
RING
RBQ6
Q8
Q7
Q10
Q6
Q5
Q9
R6*gain
R6
82.5
R7
82.5
R7*gain
1.74k
1.74k
VBAT
Figure 18. Discrete Linefeed Circuit for Power Monitoring
36
Rev. 1.0
SILICONIMAGE [ Silicon image ]
