SiM3C1xx
Table 3.14. Voltage Reference Electrical Characteristics
V
= 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
DD
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Internal Fast Settling Reference
Output Voltage
V
–40 to +85 °C,
1.62
1.65
1.68
V
REFFS
V
= 1.8–3.6 V
DD
Temperature Coefficient
Turn-on Time
TC
—
—
—
50
—
—
1.5
—
ppm/°C
µs
REFFS
t
REFFS
Power Supply Rejection
PSRR
400
ppm/V
REFFS
On-Chip Precision Reference (VREF0)
Valid Supply Range
V
VREF2X = 0
VREF2X = 1
1.8
2.7
—
—
3.6
3.6
V
V
V
DD
Output Voltage
V
25 °C ambient,
VREF2X = 0
1.195
1.2
1.205
REFP
25 °C ambient,
VREF2X = 1
2.39
2.4
2.41
V
Short-Circuit Current
Temperature Coefficient
Load Regulation
I
—
—
—
—
25
10
—
—
mA
SC
TC
LR
ppm/°C
ppm/µA
VREFP
VREFP
Load = 0 to 200 µA to
VREFGND
4.5
Load Capacitor
Turn-on Time
C
Load = 0 to 200 µA to
VREFGND
0.1
—
—
—
—
µF
VREFP
t
4.7 µF tantalum, 0.1 µF
ceramic bypass
3.8
ms
VREFPON
0.1 µF ceramic bypass
VREF2X = 0
—
—
—
200
320
560
—
—
—
µs
Power Supply Rejection
PSRR
ppm/V
ppm/V
VREFP
VREF2X = 1
External Reference
Input Current
I
Sample Rate = 250 ksps;
VREF = 3.0 V
—
5.25
—
µA
EXTREF
Preliminary Rev. 0.8
21
SILICON [ SILICON ]
