SiM3C1xx
Table 3.7. Flash Memory
Parameter
Symbol
Conditions
One 16-bit Half Word
One Page
Min
20
Typ
21
Max
22
Units
µs
1
Write Time
t
WRITE
ERASE
1
Erase Time
t
20
21
22
ms
t
Full Device
20
21
22
ms
ERALL
V
Voltage During Programming
V
1.8
20k
TBD
—
3.6
—
V
DD
PROG
Endurance (Write/Erase Cycles)
N
TBD
TBD
Cycles
Years
WE
2
Retention
t
T = 85 °C, 1k Cycles
—
RET
A
Notes:
1. Does not include sequencing time before and after the write/erase operation, which may be multiple AHB clock cycles.
2. Additional Data Retention Information is published in the Quarterly Quality and Reliability Report.
Table 3.8. Internal Oscillators
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Phase-Locked Loop (PLL0OSC)
Calibrated Output Frequency*
f
Full Temperature and
Supply Range
77
—
—
79
430
95
80
—
—
MHz
PLL0OSC
Power Supply Sensitivity*
Temperature Sensitivity*
PSS
T = 25 °C,
ppm/V
ppm/°C
PLL0OSC
PLL0OSC
PLL0OSC
A
Fout = 79 MHz
TS
V
= 3.3 V,
DD
Fout = 79 MHz
Adjustable Output Frequency
Range
f
23
—
—
80
—
MHz
µs
Lock Time
t
f
= 20 MHz,
1.7
PLL0LOCK
REF
PLL0OSC
f
= 80 MHz,
M=24, N=99,
LOCKTH = 0
f
= 32 kHz,
—
91
—
µs
REF
f
= 80 MHz,
PLL0OSC
M=0, N=2440,
LOCKTH = 0
Preliminary Rev. 0.8
15
SILICON [ SILICON ]
