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Si8244BB-C-IS1 参数 Datasheet PDF下载

Si8244BB-C-IS1图片预览
型号: Si8244BB-C-IS1
PDF下载: 下载PDF文件 查看货源
内容描述: 精确死区发生器D类音频驱动 [CLASS D AUDIO DRIVER WITH PRECISION DEAD-TIME GENERATOR]
分类和应用: 消费电路商用集成电路音频放大器视频放大器光电二极管驱动
文件页数/大小: 30 页 / 423 K
品牌: SILICON [ SILICON ]
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Si824x  
Table 4. Insulation and Safety-Related Specifications  
Value  
Parameter  
Symbol  
Test Condition  
Unit  
NBSOIC-16  
2.5 kV  
RMS  
Nominal Air Gap  
(Clearance)  
L(1O1)  
L(1O2)  
4.01  
4.01  
mm  
mm  
mm  
1
1
Nominal External Tracking (Creepage)  
Minimum Internal Gap  
(Internal Clearance)  
0.011  
Tracking Resistance  
(Proof Tracking Index)  
PTI  
ED  
IEC60112  
f = 1 MHz  
600  
V
mm  
0.019  
Erosion Depth  
Resistance  
12  
R
10  
IO  
2
(Input-Output)  
Capacitance  
(Input-Output)  
C
1.4  
4.0  
pF  
pF  
IO  
2
3
C
Input Capacitance  
I
Notes:  
1. The values in this table correspond to the nominal creepage and clearance values as detailed in “7. Package Outline:  
16-Pin Narrow Body SOIC” . VDE certifies the clearance and creepage limits as 4.7 mm minimum for the NB SOIC-16.  
UL does not impose a clearance and creepage minimum for component level certifications. CSA certifies the clearance  
and creepage limits as 3.9 mm minimum for the NB SOIC 16.  
2. To determine resistance and capacitance, the Si824x is converted into a 2-terminal device. Pins 1–8 are shorted  
together to form the first terminal and pins 9–16 are shorted together to form the second terminal. The parameters are  
then measured between these two terminals.  
3. Measured from input pin to ground.  
Table 5. IEC 60664-1 (VDE 0884 Part 2) Ratings  
Specification  
Parameter  
Test Conditions  
NB SOIC-16  
Basic Isolation Group  
Material Group  
I
Rated Mains Voltages < 150 V  
Rated Mains Voltages < 300 V  
Rated Mains Voltages < 400 V  
Rated Mains Voltages < 600 V  
I-IV  
I-III  
I-II  
I-II  
RMS  
RMS  
RMS  
RMS  
Installation Classification  
Rev. 0.2  
9
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