Si824x
Table 6. IEC 60747-5-2 Insulation Characteristics*
Characteristic
NB SOIC-16
560
Parameter
Symbol
Test Condition
Unit
V
V peak
Maximum Working Insulation Voltage
IORM
Method b1
(V
x 1.875 = V
100%
,
PR
IORM
V
1050
V peak
V peak
Input to Output Test Voltage
PR
Production Test, t = 1 sec,
Partial Discharge < 5 pC)
m
V
t = 60 sec
4000
2
Transient Overvoltage
IOTM
Pollution Degree
(DIN VDE 0110, Table 1)
Insulation Resistance at T ,
9
S
R
>10
S
V
= 500 V
IO
*Note: Maintenance of the safety data is ensured by protective circuits. The Si824x provides a climate classification of
40/125/21.
Table 7. IEC Safety Limiting Values1
Parameter
Symbol
Test Condition
NB SOIC-16
Unit
TS
150
°C
Case Temperature
JA = 105 °C/W (NB SOIC-16),
VDDI = 5.5 V,
IS
50
mA
W
Safety Input Current
VDDA = VDDB= 24 V,
TJ = 150 °C, TA = 25 °C
Device Power Dissipation2
PD
1.2
Notes:
1. Maximum value allowed in the event of a failure. Refer to the thermal derating curve in Figure 4.
2. The Si82xx is tested with VDDI = 5.5 V, VDDA = VDDB = 24 V, TJ = 150 ºC, CL = 100 pF, input 2 MHz 50% duty cycle
square wave.
10
Rev. 0.2
SILICON [ SILICON ]
