Si3056
Si3018/19/10
Table 3. DC Characteristics, VD = 3.3 V
(VD = 3.0 to 3.6 V, TA = 0 to 70 °C)
Parameter
Symbol
Test Condition
Min
2.4
—
Typ
—
—
—
—
—
15
9
Max
—
Unit
V
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
Power Supply Current, Digital
V
IH
V
0.8
—
V
IL
V
I = –2 mA
2.4
—
V
OH
O
V
I = 2 mA
0.35
10
V
OL
O
I
–10
—
µA
mA
mA
mA
L
D
D
D
1
I
I
I
V pin
—
D
1
Total Supply Current, Sleep Mode
PDN = 1, PDL = 0
PDN = 1, PDL = 1
—
—
1,2
Total Supply Current, Deep Sleep
—
1
—
Notes:
1. All inputs at 0.4 or VD – 0.4 (CMOS levels). All inputs are held static except clock and all outputs unloaded
(Static IOUT = 0 mA).
2. RGDT is not functional in this state.
Rev. 1.05
7
SILICON [ SILICON ]
