C8051F50x-F51x
5. Electrical Characteristics
5.1. Absolute Maximum Specifications
Table 5.1. Absolute Maximum Ratings
Parameter
Ambient Temperature under Bias
Storage Temperature
Conditions
Min
–55
–65
–0.3
Typ
—
Max
135
150
5.5
Units
°C
—
°C
Voltage on V
with Respect to GND
—
V
REGIN
Voltage on V with Respect to GND
–0.3
—
2.8
V
DD
Voltage on VDDA with Respect to GND
–0.3
–0.3
—
—
2.8
5.5
V
V
Voltage on V with Respect to GND
IO
Voltage on any Port I/O Pin or RST with Respect to
GND
–0.3
—
—
—
V
+ 0.3
V
IO
Maximum Total Current through V
or GND
500
mA
REGIN
Maximum Output Current Sunk by RST or any Port Pin
Maximum Output Current Sourced by any Port Pin
—
—
—
—
100
100
mA
mA
Note: Stresses outside of the range of the “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the devices at those or any other conditions
above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
40
Rev. 1.1
SILICON [ SILICON ]
