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S-8261AANMD-G2N-T2 参数 Datasheet PDF下载

S-8261AANMD-G2N-T2图片预览
型号: S-8261AANMD-G2N-T2
PDF下载: 下载PDF文件 查看货源
内容描述: 电池保护IC ,电池组 [BATTERY PROTECTION IC FOR SINGLE-CELL PACK]
分类和应用: 电池光电二极管
文件页数/大小: 36 页 / 706 K
品牌: SII [ SEIKO INSTRUMENTS INC ]
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BATTERY PROTECTION IC FOR SINGLE-CELL PACK  
S-8261 Series  
Rev.1.9_00  
3. Detection Delay Time  
Table 7  
S-8261AAG, S-8261AAH, S-8261AAJ, S-8261AAL, S-8261AAM, S-8261AAN, S-8261AAO, S-8261AAP,  
S-8261AAR, S-8261AAZ, S-8261ABB, S-8261ABC, S-8261ABE, S-8261ABJ, S-8261ABK, S-8261ABM,  
S-8261ABN, S-8261ABO, S-8261ABP, S-8261ABR, S-8261ABS  
Test  
Test  
Parameter  
Symbol  
Remark  
Min. Typ. Max. Unit  
condition  
circuit  
[DELAY TIME] 25 °C  
Overcharge detection delay time  
Overdischarge detection delay time  
Overcurrent 1 detection delay time  
tCU  
tDL  
9
9
0.96  
115  
7.2  
1.2  
144  
9
1.4  
173  
11  
s
5
5
5
5
ms  
ms  
ms  
tlOV1  
10  
10  
Overcurrent 2 detection delay time  
Load short-circuiting detection delay  
time  
tlOV2  
1.8  
2.24  
2.7  
tSHORT  
10  
220  
320  
380  
5
µs  
[DELAY TIME]  
40 °C to  
+
85 °C*1  
Overcharge detection delay time  
Overdischarge detection delay time  
Overcurrent 1 detection delay time  
tCU  
tDL  
9
9
10  
10  
0.7  
80  
5
1.2  
144  
9
2.0  
245  
15  
s
5
5
5
5
ms  
ms  
ms  
tlOV1  
Overcurrent 2 detection delay time  
Load short-circuiting detection delay  
time  
tlOV2  
1.2  
2.24  
3.8  
tSHORT  
10  
150  
320  
540  
5
µs  
*1. Since products are not screened at high and low temperatures, the specification for this temperature range  
is guaranteed by design, not tested in production.  
Table 8  
S-8261AAS  
Test  
Test  
Parameter  
Symbol  
Remark  
Min. Typ. Max. Unit  
condition  
circuit  
[DELAY TIME] 25 °C  
Overcharge detection delay time  
Overdischarge detection delay time  
Overcurrent 1 detection delay time  
tCU  
tDL  
9
9
10  
10  
0.96  
115  
3.6  
1.2  
144  
4.5  
1.4  
173  
5.4  
2.7  
s
5
5
5
5
ms  
ms  
ms  
tlOV1  
Overcurrent 2 detection delay time  
Load short-circuiting detection delay  
time  
tlOV2  
1.8  
2.24  
tSHORT  
10  
220  
320  
380  
5
µs  
[DELAY TIME]  
40 °C to  
+
85 °C*1  
Overcharge detection delay time  
Overdischarge detection delay time  
Overcurrent 1 detection delay time  
tCU  
tDL  
9
9
10  
10  
0.7  
80  
2.5  
1.2  
1.2  
144  
4.5  
2.0  
245  
7.7  
3.8  
s
5
5
5
5
ms  
ms  
ms  
tlOV1  
Overcurrent 2 detection delay time  
Load short-circuiting detection delay  
time  
tlOV2  
2.24  
tSHORT  
10  
150  
320  
540  
5
µs  
*1. Since products are not screened at high and low temperatures, the specification for this temperature range  
is guaranteed by design, not tested in production.  
Seiko Instruments Inc.  
11