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S-8211CAB-M5T1G 参数 Datasheet PDF下载

S-8211CAB-M5T1G图片预览
型号: S-8211CAB-M5T1G
PDF下载: 下载PDF文件 查看货源
内容描述: 电池保护IC 1格包 [BATTERY PROTECTION IC FOR 1-CELL PACK]
分类和应用: 电池光电二极管
文件页数/大小: 41 页 / 403 K
品牌: SII [ SEIKO INSTRUMENTS INC ]
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BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211C Series  
Rev.5.0_00  
(3) S-8211CAD  
Table 12  
Test  
Test  
Item  
Symbol  
Condition  
Min.  
Typ.  
Max. Unit Condi-  
Circuit  
tion  
DELAY TIME (Ta = 25 °C)  
tCU  
115  
30  
14.5  
240  
7.2  
143  
38  
172  
46  
ms  
ms  
ms  
9
5
5
5
5
5
Overcharge detection delay time  
tDL  
9
Overdischarge detection delay time  
Discharge overcurrent detection delay time  
Load short-circuiting detection delay time  
Charge overcurrent detection delay time  
tDIOV  
tSHORT  
tCIOV  
18  
22  
10  
10  
10  
300  
9
360  
11  
µ
s
ms  
DELAY TIME (Ta =  
40 to  
+
85 °C) *1  
tCU  
tDL  
tDIOV  
tSHORT  
tCIOV  
82  
20  
10  
150  
5
143  
38  
18  
300  
9
240  
65  
30  
540  
15  
ms  
ms  
ms  
9
9
10  
10  
10  
5
5
5
5
5
Overcharge detection delay time  
Overdischarge detection delay time  
Discharge overcurrent detection delay time  
Load short-circuiting detection delay time  
Charge overcurrent detection delay time  
µ
ms  
s
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed  
by design, not tested in production.  
(4) S-8211CAE, S-8211CAT, S-8211CAX, S-8211CBR  
Table 13  
Test  
Test  
Item  
Symbol  
Condition  
Min.  
Typ.  
Max. Unit Condi-  
tion  
Circuit  
DELAY TIME (Ta = 25 °C)  
Overcharge detection delay time  
Overdischarge detection delay time  
Discharge overcurrent detection delay time  
Load short-circuiting detection delay time  
Charge overcurrent detection delay time  
tCU  
tDL  
tDIOV  
tSHORT  
tCIOV  
0.96  
120  
14.5  
240  
7.2  
1.2  
150  
18  
300  
9
1.4  
180  
22  
360  
11  
s
ms  
ms  
µs  
ms  
9
9
10  
10  
10  
5
5
5
5
5
DELAY TIME (Ta =  
40 to  
+
85 °C) *1  
tCU  
tDL  
tDIOV  
tSHORT  
tCIOV  
0.7  
83  
10  
150  
5
1.2  
150  
18  
300  
9
2.0  
255  
30  
540  
15  
s
ms  
ms  
9
9
10  
10  
10  
5
5
5
5
5
Overcharge detection delay time  
Overdischarge detection delay time  
Discharge overcurrent detection delay time  
Load short-circuiting detection delay time  
Charge overcurrent detection delay time  
µ
s
ms  
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed  
by design, not tested in production.  
12  
Seiko Instruments Inc.  
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