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S-80819CLNB-B6ET2G 参数 Datasheet PDF下载

S-80819CLNB-B6ET2G图片预览
型号: S-80819CLNB-B6ET2G
PDF下载: 下载PDF文件 查看货源
内容描述: 超小型高精度电压检测器 [SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR]
分类和应用:
文件页数/大小: 58 页 / 702 K
品牌: SII [ SEIKO INSTRUMENTS INC ]
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SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR  
S-808xxC Series  
Rev.4.3_00  
3. S-80846KNUA-D2CT2G, S-80846KNY-x-G  
Table 20  
(Ta = 25 °C unless otherwise specified)  
Test  
Item  
Symbol  
Condition  
Min.  
Typ.  
Max.  
Unit  
circuit  
Detection voltage*1  
Hysteresis width  
Current consumption  
Operating voltage  
Output current  
4.500 4.600*2 4.700  
0.95  
0.59  
2.88  
V
V
µA  
V
mA  
mA  
1
1
2
1
3
3
VDET  
VHYS  
ISS  
VDD  
IOUT  
0.05  
0.9  
1.36  
4.98  
0.10  
2.7  
10.0  
V
DD = 6.0 V  
Output transistor,  
V
DD = 1.2 V  
DD = 2.4 V  
Nch, VDS = 0.5 V  
V
Output transistor,  
Leakage current  
Response time  
ILEAK  
0.1  
60  
3
1
µA  
µs  
Nch, VDD = 10.0 V, VDS = 10.0 V  
tPLH  
∆ − VDET  
Ta • −VDET  
Detection voltage  
temperature  
ppm/°C  
1
Ta = −40 to 85 °C  
100  
350  
coefficient*3  
*1. VDET: Actual detection voltage value  
*2. Specified detection voltage value (VDET(S)  
)
*3. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.  
∆ − VDET  
Ta  
∆ − VDET  
Ta VDET  
*2  
[
mV/°C *1  
]
= −VDET(S)  
(
Typ.  
)
[
V
]
×
[
ppm/°C *3  
÷1000  
]
*1. Temperature change ratio of the detection voltage  
*2. Specified detection voltage  
*3. Detection voltage temperature coefficient  
„ Precautions  
Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in  
electrostatic protection circuit.  
In CMOS output products of the S-808xxC series, the through-type current flows at the detection and the  
release. If the input impedance is high, oscillation may occur due to the voltage drop by the through-type  
current during releasing.  
In CMOS output products oscillation may occur when a pull-down resistor is used, and falling speed of the  
power supply voltage (VDD) is slow near the detection voltage.  
When designing for mass production using an application circuit described herein, the product deviation and  
temperature characteristics should be taken into consideration. SII shall not bear any responsibility for the  
products on the circuits described herein.  
SII claims no responsibility for any and all disputes arising out of or in connection with any infringement of the  
products including this IC upon patents owned by a third party.  
28  
Seiko Instruments Inc.  
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