SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.4.3_00
Electrical Characteristics for Customized Products
1. S-80824KNUA-D2BT2G, S-80824KNY-x-G
Table 18
(Ta = 25 °C unless otherwise specified)
Test
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
circuit
Detection voltage*1
Release voltage
Current consumption
Operating voltage
Output current
2.295 2.400*2 2.505
4.300
0.95
0.03
0.23
V
V
µA
V
mA
mA
1
1
2
1
3
3
−VDET
+VDET
ISS
VDD
IOUT
4.400 4.500
0.8
0.24
0.50
2.4
10.0
VDD=6.0 V
Output transistor,
V
DD = 0.95 V
Nch, VDS = 0.5 V
V
DD = 1.2 V
Output transistor,
Leakage current
ILEAK
tPLH
0.1
60
3
1
µA
µs
Nch, VDD = 10.0 V, VDS = 10.0 V
Response time
Detection voltage
temperature
∆ − VDET
∆Ta • −VDET
Ta = −40 to 85 °C
100
350 ppm/°C
1
coefficient*3
*1. −VDET: Actual detection voltage value
*2. Specified detection voltage value (−VDET(S)
)
*3. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
∆ − VDET
∆Ta
∆ − VDET
∆Ta • −VDET
*2
[
mV/°C *1
]
= −VDET(S)
(
Typ.
)
[
V
]
×
[
ppm/°C *3
÷1000
]
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
26
Seiko Instruments Inc.
SII [ SEIKO INSTRUMENTS INC ]
