SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
N-CHANNEL TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
I
DM
Limited
10
I
D
- Drain Current (A)
Limited by R
DS(on)
*
100 us
1 ms
10 ms
100 ms
1
s
10
s,
DC
BVDSS Limited
1
0.1
T
C
= 25
°C
Single
Pulse
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area
1
Duty Cycle = 0.5
Normalized
Effective Transient
Thermal Impedance
0.2
0.1
0.1
P
DM
Notes:
0.05
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.02
2. Per Unit Base = R
thJA
= 110 °C/W
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (s)
10
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
6 / 15
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