SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
P-CHANNEL TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
2.0
8
I
D
= 2.5 A
V
DS
= 15 V
R
DS(on)
- On-Resistance (Normalized)
V
GS
-
Gate-to-Source
Voltage (V)
I
D
= 3.9 A
1.7
V
GS
= 10 V
1.4
6
4
1.1
2
0.8
0
0
2
4
6
8
10
Q
g
- Total
Gate
Charge (nC)
0.5
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Gate Charge
100
On-Resistance vs. Junction Temperature
0.50
10
I
S
-
Source
Current (A)
T
J
= 150
°C
1
0.40
R
DS(on)
- On-Resistance (Ω)
0.30
0.1
T
J
= 25
°C
0.01
0.20
T
J
= 150
°C
0.10
T
J
= 25
°C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source Drain Diode Forward Voltage
1.0
On-Resistance vs. Gate-to-Source Voltage
- 29
- 30
I
D
= 1 mA
0.7
V
GS(th)
Variance (V)
I
D
= 250 μA
V
DS
- Drain-to-Source Voltage (V)
175
- 31
- 32
- 33
- 34
- 35
- 36
- 50
0.4
I
D
= 5 mA
0.1
- 0.2
- 0.5
- 50 - 25
0
25
50
75
100
125
150
- 25
T
J
- Temperature (°C)
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
9 / 15
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
