SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
V
DD
= 15 V, R
L
= 15
I
D
1 A, V
GEN
= 10 V, R
g
= 1
V
DD
= - 15 V, R
L
= 15
I
D
- 1 A, V
GEN
= - 10 V, R
g
= 1
V
DD
= 15 V, R
L
= 15
I
D
1 A, V
GEN
= 10 V, R
g
= 1
V
DD
= - 15 V, R
L
= 15
I
D
- 1 A, V
GEN
= - 10 V, R
g
= 1
V
DD
= 15 V, R
L
= 15
I
D
1 A, V
GEN
= 10 V, R
g
= 1
V
DD
= - 15 V, R
L
= 15
I
D
- 1 A, V
GEN
= - 10 V, R
g
= 1
V
DD
= 15 V, R
L
= 15
I
D
1 A, V
GEN
= 10 V, R
g
= 1
V
DD
= - 15 V, R
L
= 15
I
D
- 1 A, V
GEN
= - 10 V, R
g
= 1
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
MIN.
-
-
-
-
-
-
-
-
TYP.
7
7
10
9
14
17
7
8
MAX.
11
11
15
14
ns
21
26
11
12
UNIT
Turn-On Delay Time
t
d(on)
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
Fall Time
t
f
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
Forward Voltage
I
SM
V
SD
I
S
= 2 A
I
S
= - 1.5 A
N-Ch
P-Ch
N-Ch
P-Ch
-
-
-
-
-
-
0.8
- 0.8
22
- 21
1.2
- 1.2
A
V
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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