SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
N-CHANNEL TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
R
DS(on)
- On-Resistance (Normalized)
2.0
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 3.9 A
V
DS
= 15 V
I
D
= 4.9 A
1.7
V
GS
= 10 V
6
1.4
4
1.1
V
GS
= 4.5 V
2
0.8
0
0
2
4
6
8
10
Q
g
- Total
Gate
Charge (nC)
0.5
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Gate Charge
100
0.25
On-Resistance vs. Junction Temperature
10
I
S
-
Source
Current (A)
T
J
= 150
°C
0.20
R
DS(on)
- On-Resistance (Ω)
1
0.15
0.1
T
J
= 25
°C
0.10
T
J
= 150
°C
0.01
0.05
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0.00
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Source Drain Diode Forward Voltage
0.5
On-Resistance vs. Gate-to-Source Voltage
42
V
DS
- Drain-to-Source Voltage (V)
0.2
V
GS(th)
Variance (V)
40
I
D
= 1 mA
- 0.1
I
D
= 5 mA
- 0.4
I
D
= 250 μA
38
36
- 0.7
34
- 1.0
- 50 - 25
0
25
50
75
100
125
150
175
32
- 50 - 25
T
J
- Temperature (°C)
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
5 / 15
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