SQ1912EEH
Automotive Dual N-Channel
20 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
200
5
V
GS
-
Gate-to-Source
Voltage (V)
160
C - Capacitance (pF)
4
I
D
= 1.2 A
V
DS
= 10 V
120
3
80
C
iss
2
40
C
rss
0
0
C
oss
1
4
8
12
16
V
DS
- Drain-to-Source Voltage (V)
20
0
0.0
0.5
1.0
1.5
2.0
Q
g
- Total
Gate
Charge (nC)
2.5
Capacitance
2.0
R
DS(on)
- On-Resistance (Normalized)
I
D
= 1.13 A
V
GS
= 4.5 V
I
S
-
Source
Current (A)
Gate Charge
10
1.7
1
T
J
= 150
°C
1.4
0.1
T
J
= 25
°C
1.1
0.01
0.8
0.5
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
1.5
0.2
1.2
R
DS(on)
- On-Resistance (Ω)
0.1
V
GS(th)
Variance (V)
0.0
0.9
- 0.1
I
D
= 250 μA
I
D
= 100 μA
0.6
T
J
= 150
°C
0.3
T
J
= 25
°C
0.0
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
- 0.2
- 0.3
- 0.4
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
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